Part Details for BC847BE6327 by Infineon Technologies AG
Overview of BC847BE6327 by Infineon Technologies AG
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Audio and Video Systems
Price & Stock for BC847BE6327
Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 255 |
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RFQ | ||
DISTI #
BC847BE6327
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TME | Transistor: NPN, bipolar, 45V, 0.1A, 0.25W, SOT23 Min Qty: 20 | 1518 |
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$0.0352 / $0.0529 | Buy Now |
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ComSIT USA | NPN SILICON AF TRANSISTOR Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon RoHS: Compliant | Europe - 1335 |
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RFQ | |
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Sense Electronic Company Limited | SOT23 | 4970 |
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RFQ |
Part Details for BC847BE6327
BC847BE6327 CAD Models
BC847BE6327 Part Data Attributes:
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BC847BE6327
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
BC847BE6327
Infineon Technologies AG
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | End Of Life | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 4 Weeks | |
Collector Current-Max (IC) | 0.1 A | |
Collector-Emitter Voltage-Max | 45 V | |
Configuration | SINGLE | |
DC Current Gain-Min (hFE) | 200 | |
JESD-30 Code | R-PDSO-G3 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | NPN | |
Power Dissipation-Max (Abs) | 0.33 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Transition Frequency-Nom (fT) | 250 MHz |