Part Details for BC637-10 by Continental Device India Ltd
Results Overview of BC637-10 by Continental Device India Ltd
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
BC637-10 Information
BC637-10 by Continental Device India Ltd is a Small Signal Bipolar Transistor.
Small Signal Bipolar Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for BC637-10
BC637-10 CAD Models
BC637-10 Part Data Attributes
|
BC637-10
Continental Device India Ltd
Buy Now
Datasheet
|
Compare Parts:
BC637-10
Continental Device India Ltd
Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, PLASTIC PACKAGE-3
Select a part to compare: |
Pbfree Code | No | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | CONTINENTAL DEVICE INDIA LTD | |
Package Description | CYLINDRICAL, O-PBCY-T3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Collector Current-Max (IC) | 1 A | |
Collector-Emitter Voltage-Max | 60 V | |
Configuration | SINGLE | |
DC Current Gain-Min (hFE) | 40 | |
JEDEC-95 Code | TO-92 | |
JESD-30 Code | O-PBCY-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | ROUND | |
Package Style | CYLINDRICAL | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | NPN | |
Power Dissipation-Max (Abs) | 1 W | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | BOTTOM | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Element Material | SILICON | |
Transition Frequency-Nom (fT) | 200 MHz | |
VCEsat-Max | 0.5 V |