Datasheets
BC637-10 by:
Continental Device India Ltd
Continental Device India Ltd
Infineon Technologies AG
Jiangsu Changjiang Electronics Technology Co Ltd
Luguang Electronic Technology Co Ltd
Micro Commercial Components
North American Philips Discrete Products Div
NXP Semiconductors
Secos Corporation
Siemens
Not Found

Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, PLASTIC PACKAGE-3

Part Details for BC637-10 by Continental Device India Ltd

Results Overview of BC637-10 by Continental Device India Ltd

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BC637-10 Information

BC637-10 by Continental Device India Ltd is a Small Signal Bipolar Transistor.
Small Signal Bipolar Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Part Details for BC637-10

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BC637-10 Part Data Attributes

BC637-10 Continental Device India Ltd
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BC637-10 Continental Device India Ltd Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, PLASTIC PACKAGE-3
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Pbfree Code No
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer CONTINENTAL DEVICE INDIA LTD
Package Description CYLINDRICAL, O-PBCY-T3
Reach Compliance Code compliant
ECCN Code EAR99
Collector Current-Max (IC) 1 A
Collector-Emitter Voltage-Max 60 V
Configuration SINGLE
DC Current Gain-Min (hFE) 40
JEDEC-95 Code TO-92
JESD-30 Code O-PBCY-T3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape ROUND
Package Style CYLINDRICAL
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type NPN
Power Dissipation-Max (Abs) 1 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 200 MHz
VCEsat-Max 0.5 V