Datasheets
BB659C by:

Variable Capacitance Diode, Very High Frequency, 39pF C(T), Silicon

Part Details for BB659C by Siemens

Overview of BB659C by Siemens

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Applications Internet of Things (IoT) Smart Cities Transportation and Logistics Agriculture Technology Automotive

Price & Stock for BB659C

Part # Distributor Description Stock Price Buy
Chip1Cloud Silicon Variable Capacitance Diode (For VHF-TV-tuners High capacitance ratio Low series inductance Low series resistance) 29981
RFQ

Part Details for BB659C

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BB659C Part Data Attributes

BB659C Siemens
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BB659C Siemens Variable Capacitance Diode, Very High Frequency, 39pF C(T), Silicon
Part Life Cycle Code Transferred
Ihs Manufacturer SIEMENS A G
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.10.00.80
Configuration SINGLE
Diode Capacitance Ratio-Min 9.5
Diode Capacitance-Nom 39 pF
Diode Element Material SILICON
Diode Type VARIABLE CAPACITANCE DIODE
Frequency Band VERY HIGH FREQUENCY
JESD-30 Code R-PDSO-F2
Number of Elements 1
Number of Terminals 2
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Qualification Status Not Qualified
Surface Mount YES
Terminal Form FLAT
Terminal Position DUAL

Alternate Parts for BB659C

This table gives cross-reference parts and alternative options found for BB659C. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BB659C, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
HVC200A Variable Capacitance Diode, Very High Frequency, 29.75pF C(T), 32V, Silicon, SC-79, 2 PIN Hitachi Ltd BB659C vs HVC200A
BB639 Variable Capacitance Diode, Very High Frequency, 38.3pF C(T), 30V, Silicon Siemens BB659C vs BB639
SMV1705-079 Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 18.3pF C(T), 12V, Silicon, Hyperabrupt, SC-79, 2 PIN Alpha Industries BB659C vs SMV1705-079
HVU417C Variable Capacitance Diode, 8.6pF C(T), 30V, Silicon, PLASTIC, URP, 2 PIN Hitachi Ltd BB659C vs HVU417C
BB545 Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 20pF C(T), 30V, Silicon Siemens BB659C vs BB545
BB640E6327 Variable Capacitance Diode, Silicon Siemens BB659C vs BB640E6327
HVD355B-E 6.8pF, SILICON, VARIABLE CAPACITANCE DIODE, SFP-2 Renesas Electronics Corporation BB659C vs HVD355B-E
HVU202A Variable Capacitance Diode, 15.29pF C(T), 34V, Silicon, URP, 2 PIN Hitachi Ltd BB659C vs HVU202A
HVD396C-E 15.2pF, SILICON, VARIABLE CAPACITANCE DIODE, SFP-2 Renesas Electronics Corporation BB659C vs HVD396C-E
MV1626 12pF, 20V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7, GLASS PACKAGE-2 Aeroflex Inc BB659C vs MV1626

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