Datasheets
BB602M by:

UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, MPAK-4

Part Details for BB602M by Renesas Electronics Corporation

Overview of BB602M by Renesas Electronics Corporation

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Part Details for BB602M

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BB602M Part Data Attributes:

BB602M Renesas Electronics Corporation
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BB602M Renesas Electronics Corporation UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, MPAK-4
Part Life Cycle Code Transferred
Ihs Manufacturer RENESAS ELECTRONICS CORP
Package Description SMALL OUTLINE, R-PDSO-G4
Pin Count 4
Reach Compliance Code compliant
ECCN Code EAR99
Case Connection SOURCE
Configuration SINGLE
DS Breakdown Voltage-Min 6 V
Drain Current-Max (ID) 0.02 A
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 0.05 pF
Highest Frequency Band ULTRA HIGH FREQUENCY BAND
JESD-30 Code R-PDSO-G4
Number of Elements 1
Number of Terminals 4
Operating Mode DUAL GATE, ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Gain-Min (Gp) 17 dB
Qualification Status Not Qualified
Surface Mount YES
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application AMPLIFIER
Transistor Element Material SILICON

Alternate Parts for BB602M

This table gives cross-reference parts and alternative options found for BB602M. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BB602M, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
BB602M RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, MPAK-4 Hitachi Ltd BB602M vs BB602M
Part Number Description Manufacturer Compare
BB602M RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, MPAK-4 Hitachi Ltd BB602M vs BB602M

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