Part Details for BAV199 by Galaxy Semi-Conductor Co Ltd
Overview of BAV199 by Galaxy Semi-Conductor Co Ltd
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- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for BAV199
BAV199 CAD Models
BAV199 Part Data Attributes:
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BAV199
Galaxy Semi-Conductor Co Ltd
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BAV199
Galaxy Semi-Conductor Co Ltd
Rectifier Diode,
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Part Life Cycle Code | Active | |
Ihs Manufacturer | GALAXY SEMI-CONDUCTOR CO LTD | |
Package Description | R-PDSO-G3 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8541.10.00.70 | |
Application | GENERAL PURPOSE | |
Breakdown Voltage-Min | 85 V | |
Configuration | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS | |
Diode Element Material | SILICON | |
Diode Type | RECTIFIER DIODE | |
Forward Voltage-Max (VF) | 1.25 V | |
JESD-30 Code | R-PDSO-G3 | |
Non-rep Pk Forward Current-Max | 4 A | |
Number of Elements | 2 | |
Number of Phases | 1 | |
Number of Terminals | 3 | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -65 °C | |
Output Current-Max | 0.16 A | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Power Dissipation-Max | 0.25 W | |
Rep Pk Reverse Voltage-Max | 85 V | |
Reverse Current-Max | 0.005 µA | |
Reverse Recovery Time-Max | 0.003 µs | |
Reverse Test Voltage | 75 V | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |