Datasheets
BA592E6327 by:

Mixer Diode, Very High Frequency, Silicon,

Part Details for BA592E6327 by Infineon Technologies AG

Overview of BA592E6327 by Infineon Technologies AG

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Applications Consumer Electronics Education and Research Audio and Video Systems Aerospace and Defense Entertainment and Gaming Communication and Networking

Price & Stock for BA592E6327

Part # Distributor Description Stock Price Buy
Bristol Electronics   767
RFQ
DISTI # BA592E6327
TME Diode: switching, 35V, 100mA, SOD323, single diode, reel,tape Min Qty: 5 2330
  • 5 $0.2480
  • 25 $0.1530
  • 100 $0.1230
  • 500 $0.1100
  • 3,000 $0.1030
$0.1030 / $0.2480 Buy Now
Chip 1 Exchange INSTOCK 69000
RFQ
Chip 1 Exchange INSTOCK 18000
RFQ
Chip Stock   18450
RFQ
Chip1Cloud DIODE RF SW 35V 100MA SOD-323 8000
RFQ

Part Details for BA592E6327

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BA592E6327 Part Data Attributes:

BA592E6327 Infineon Technologies AG
Buy Now Datasheet
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BA592E6327 Infineon Technologies AG Mixer Diode, Very High Frequency, Silicon,
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.10.00.60
Samacsys Manufacturer Infineon
Configuration SINGLE
Diode Capacitance-Max 1.4 pF
Diode Element Material SILICON
Diode Type MIXER DIODE
Forward Voltage-Max (VF) 1 V
Frequency Band VERY HIGH FREQUENCY
JESD-30 Code R-PDSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 125 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Qualification Status Not Qualified
Rep Pk Reverse Voltage-Max 35 V
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL

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