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Part Details for AUIRLS3034-7TRL by Infineon Technologies AG
Overview of AUIRLS3034-7TRL by Infineon Technologies AG
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for AUIRLS3034-7TRL
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
AUIRLS3034-7TRL-ND
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DigiKey | MOSFET N-CH 40V 240A D2PAK Min Qty: 800 Lead time: 12 Weeks Container: Tape & Reel (TR) | Limited Supply - Call |
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$2.8937 | Buy Now |
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DISTI #
AUIRLS3034-7TRL
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Avnet Americas | Trans MOSFET N-CH 40V 380A 7-Pin(6+Tab) D2PAK T/R - Tape and Reel (Alt: AUIRLS3034-7TRL) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 12 Weeks, 0 Days Container: Reel | 0 |
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RFQ | |
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DISTI #
942-AUIRLS3034-7TRL
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Mouser Electronics | MOSFETs Auto 40V Sngl N-Ch HEXFET PowerMOSFET RoHS: Compliant | 3688 |
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$2.8200 / $6.2000 | Buy Now |
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DISTI #
SP001519894
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EBV Elektronik | Trans MOSFET N-CH 40V 380A 7-Pin(6+Tab) D2PAK T/R (Alt: SP001519894) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 13 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for AUIRLS3034-7TRL
AUIRLS3034-7TRL CAD Models
AUIRLS3034-7TRL Part Data Attributes
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AUIRLS3034-7TRL
Infineon Technologies AG
Buy Now
Datasheet
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AUIRLS3034-7TRL
Infineon Technologies AG
Power Field-Effect Transistor, 240A I(D), 40V, 0.0014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263CB, ROHS COMPLIANT, PLASTIC, D2PAK-7
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| Rohs Code | Yes | |
| Part Life Cycle Code | End Of Life | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | ROHS COMPLIANT, PLASTIC, D2PAK-7 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 12 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | |
| Avalanche Energy Rating (Eas) | 250 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 40 V | |
| Drain Current-Max (ID) | 240 A | |
| Drain-source On Resistance-Max | 0.0014 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263CB | |
| JESD-30 Code | R-PSSO-G6 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 6 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 380 W | |
| Pulsed Drain Current-Max (IDM) | 1540 A | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |