Part Details for AUIRLR3110ZTRL by Infineon Technologies AG
Overview of AUIRLR3110ZTRL by Infineon Technologies AG
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (7 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (7 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Medical Imaging
Robotics and Drones
Price & Stock for AUIRLR3110ZTRL
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
AUIRLR3110ZTRL-ND
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DigiKey | MOSFET N-CH 100V 63A DPAK Min Qty: 3000 Lead time: 12 Weeks Container: Tape & Reel (TR) | Limited Supply - Call |
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$1.4349 | Buy Now |
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DISTI #
AUIRLR3110ZTRL
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Avnet Americas | Trans MOSFET N-CH 100V 63A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: AUIRLR3110ZTRL) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 12 Weeks, 0 Days Container: Reel | 0 |
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RFQ | |
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DISTI #
942-AUIRLR3110ZTRL
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Mouser Electronics | MOSFETs AUTO 100V 1 N-CH HEXFET 14mOhms RoHS: Compliant | 0 |
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Order Now | |
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Chip Stock | 3000 |
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RFQ | ||
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DISTI #
SP001516790
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EBV Elektronik | Trans MOSFET N-CH 100V 63A 3-Pin(2+Tab) DPAK T/R (Alt: SP001516790) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 13 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for AUIRLR3110ZTRL
AUIRLR3110ZTRL CAD Models
AUIRLR3110ZTRL Part Data Attributes
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AUIRLR3110ZTRL
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
AUIRLR3110ZTRL
Infineon Technologies AG
Power Field-Effect Transistor, 42A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 12 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | ULTRA-LOW RESISTANCE | |
| Avalanche Energy Rating (Eas) | 110 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 42 A | |
| Drain-source On Resistance-Max | 0.014 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252AA | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 140 W | |
| Pulsed Drain Current-Max (IDM) | 250 A | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for AUIRLR3110ZTRL
This table gives cross-reference parts and alternative options found for AUIRLR3110ZTRL. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of AUIRLR3110ZTRL, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| AUIRLR3110Z | Power Field-Effect Transistor, 42A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 | Infineon Technologies AG | AUIRLR3110ZTRL vs AUIRLR3110Z |
| IRLR3110ZTRPBF | Power Field-Effect Transistor, 42A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3 | Infineon Technologies AG | AUIRLR3110ZTRL vs IRLR3110ZTRPBF |
| IRLR3110ZTRRPBF | Power Field-Effect Transistor, 42A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3 | International Rectifier | AUIRLR3110ZTRL vs IRLR3110ZTRRPBF |
| IRLR3110ZTRRPBF | Power Field-Effect Transistor, 42A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3 | Infineon Technologies AG | AUIRLR3110ZTRL vs IRLR3110ZTRRPBF |
| IRLR3110ZPBF | Power Field-Effect Transistor, 63A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, D-PAK, 3 PIN | Infineon Technologies AG | AUIRLR3110ZTRL vs IRLR3110ZPBF |
| IRLR3110ZTRLPBF | Power Field-Effect Transistor, 42A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3 | Infineon Technologies AG | AUIRLR3110ZTRL vs IRLR3110ZTRLPBF |
| IRLR3110ZPBF | Power Field-Effect Transistor, 63A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, D-PAK, 3 PIN | International Rectifier | AUIRLR3110ZTRL vs IRLR3110ZPBF |