Part Details for AUIRFR024NTRL by International Rectifier
Overview of AUIRFR024NTRL by International Rectifier
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for AUIRFR024NTRL
Part # | Distributor | Description | Stock | Price | Buy | |
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Rochester Electronics | AUIRFR024N - 55V-60V N-Channel Automotive MOSFET RoHS: Compliant Status: Obsolete Min Qty: 1 | 68 |
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$0.7392 / $0.8696 | Buy Now |
Part Details for AUIRFR024NTRL
AUIRFR024NTRL CAD Models
AUIRFR024NTRL Part Data Attributes
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AUIRFR024NTRL
International Rectifier
Buy Now
Datasheet
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Compare Parts:
AUIRFR024NTRL
International Rectifier
Power Field-Effect Transistor, 17A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
Part Package Code | TO-252AA | |
Package Description | ROHS COMPLIANT, PLASTIC, DPAK-3 | |
Pin Count | 3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Additional Feature | AVALANCHE RATED, HIGH RELIABILITY | |
Avalanche Energy Rating (Eas) | 71 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 55 V | |
Drain Current-Max (ID) | 17 A | |
Drain-source On Resistance-Max | 0.075 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-252AA | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 45 W | |
Pulsed Drain Current-Max (IDM) | 68 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN OVER NICKEL | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for AUIRFR024NTRL
This table gives cross-reference parts and alternative options found for AUIRFR024NTRL. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of AUIRFR024NTRL, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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AUIRFR024N | Power Field-Effect Transistor, 17A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 | Infineon Technologies AG | AUIRFR024NTRL vs AUIRFR024N |
AUIRFR024NTRL | Power Field-Effect Transistor, 17A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 | Infineon Technologies AG | AUIRFR024NTRL vs AUIRFR024NTRL |
IRFR024N | Power Field-Effect Transistor, 17A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 | Infineon Technologies AG | AUIRFR024NTRL vs IRFR024N |
IRFR024NTRLPBF | Power Field-Effect Transistor, 17A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 | International Rectifier | AUIRFR024NTRL vs IRFR024NTRLPBF |
IRFR024NTRL | Power Field-Effect Transistor, 17A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 | International Rectifier | AUIRFR024NTRL vs IRFR024NTRL |
IRFR024NPBF | Power Field-Effect Transistor, 17A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3/2 | Infineon Technologies AG | AUIRFR024NTRL vs IRFR024NPBF |
IRFR024NTRLPBF | Power Field-Effect Transistor, 17A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3/2 | Infineon Technologies AG | AUIRFR024NTRL vs IRFR024NTRLPBF |
IRFR024NTRRPBF | Power Field-Effect Transistor, 17A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 | International Rectifier | AUIRFR024NTRL vs IRFR024NTRRPBF |
IRFR024NTRRPBF | Power Field-Effect Transistor, 17A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3/2 | Infineon Technologies AG | AUIRFR024NTRL vs IRFR024NTRRPBF |
AUIRFR024NTR | Power Field-Effect Transistor, 17A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 | International Rectifier | AUIRFR024NTRL vs AUIRFR024NTR |