Datasheets
AUIRF3805S-7P by:
International Rectifier
Infineon Technologies AG
International Rectifier
Not Found

Power Field-Effect Transistor, 160A I(D), 55V, 0.0026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, PLASTIC, D2PAK-7

Part Details for AUIRF3805S-7P by International Rectifier

Results Overview of AUIRF3805S-7P by International Rectifier

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Applications Energy and Power Systems Renewable Energy

AUIRF3805S-7P Information

AUIRF3805S-7P by International Rectifier is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for AUIRF3805S-7P

Part # Distributor Description Stock Price Buy
Vyrian Transistors 7772
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Part Details for AUIRF3805S-7P

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AUIRF3805S-7P Part Data Attributes

AUIRF3805S-7P International Rectifier
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AUIRF3805S-7P International Rectifier Power Field-Effect Transistor, 160A I(D), 55V, 0.0026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, PLASTIC, D2PAK-7
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Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Package Description ROHS COMPLIANT, PLASTIC, D2PAK-7
Pin Count 7
Reach Compliance Code compliant
ECCN Code EAR99
Additional Feature AVALANCHE RATED, ULTRA-LOW RESISTANCE
Avalanche Energy Rating (Eas) 680 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 55 V
Drain Current-Max (ID) 160 A
Drain-source On Resistance-Max 0.0026 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G6
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 6
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 300 W
Pulsed Drain Current-Max (IDM) 1000 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN OVER NICKEL
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for AUIRF3805S-7P

This table gives cross-reference parts and alternative options found for AUIRF3805S-7P. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of AUIRF3805S-7P, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
AUIRF3805S-7P Infineon Technologies AG $2.1209 Power Field-Effect Transistor, 160A I(D), 55V, 0.0026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-7 AUIRF3805S-7P vs AUIRF3805S-7P
Part Number Manufacturer Composite Price Description Compare
IRF3805S-7P International Rectifier Check for Price Power Field-Effect Transistor, 160A I(D), 55V, 0.0026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-7 AUIRF3805S-7P vs IRF3805S-7P
IRF3805STRL-7P International Rectifier Check for Price Power Field-Effect Transistor, 160A I(D), 55V, 0.0026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-7 AUIRF3805S-7P vs IRF3805STRL-7P

AUIRF3805S-7P Related Parts

AUIRF3805S-7P Frequently Asked Questions (FAQ)

  • The maximum junction temperature for the AUIRF3805S-7P is 150°C. However, it's recommended to keep the junction temperature below 125°C for reliable operation and to ensure a long lifespan.

  • Yes, the AUIRF3805S-7P is suitable for high-frequency switching applications up to 1 MHz. However, it's essential to consider the device's switching losses, gate drive requirements, and layout considerations to ensure reliable operation.

  • To ensure proper cooling, it's recommended to attach a heat sink to the device, and to design the PCB with thermal vias and a thermal pad to dissipate heat efficiently. The thermal resistance of the heat sink and PCB should be considered to keep the junction temperature within the recommended range.

  • The recommended gate drive voltage for the AUIRF3805S-7P is between 10 V and 15 V. A higher gate drive voltage can reduce the device's on-state resistance, but it may also increase the switching losses and electromagnetic interference (EMI).

  • Yes, the AUIRF3805S-7P can be used in a parallel configuration to increase the current handling capability. However, it's essential to ensure that the devices are properly matched, and the gate drive signals are synchronized to prevent uneven current sharing and oscillations.