Datasheets
AUIRF3710Z by:

Power Field-Effect Transistor, 59A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3

Part Details for AUIRF3710Z by International Rectifier

Overview of AUIRF3710Z by International Rectifier

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Applications Consumer Electronics Energy and Power Systems Renewable Energy Automotive

Price & Stock for AUIRF3710Z

Part # Distributor Description Stock Price Buy
ComSIT USA HEXFET POWER MOSFET Power Field-Effect Transistor, 59A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Compliant Europe - 350
RFQ
Chip1Cloud HEXFET? Power MOSFET 104900
RFQ

Part Details for AUIRF3710Z

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AUIRF3710Z Part Data Attributes:

AUIRF3710Z International Rectifier
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AUIRF3710Z International Rectifier Power Field-Effect Transistor, 59A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Part Package Code TO-220AB
Package Description TO-220AB, 3 PIN
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Avalanche Energy Rating (Eas) 200 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 59 A
Drain-source On Resistance-Max 0.018 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 150 pF
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 160 W
Pulsed Drain Current-Max (IDM) 240 A
Qualification Status Not Qualified
Reference Standard AEC-Q101
Surface Mount NO
Terminal Finish MATTE TIN OVER NICKEL
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 97 ns
Turn-on Time-Max (ton) 94 ns

Alternate Parts for AUIRF3710Z

This table gives cross-reference parts and alternative options found for AUIRF3710Z. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of AUIRF3710Z, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRF3710ZPBF Power Field-Effect Transistor, 59A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3 International Rectifier AUIRF3710Z vs IRF3710ZPBF
IRF3710ZPBF Power Field-Effect Transistor, 59A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3 Infineon Technologies AG AUIRF3710Z vs IRF3710ZPBF
IRF3710Z Power Field-Effect Transistor, 59A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN International Rectifier AUIRF3710Z vs IRF3710Z
Part Number Description Manufacturer Compare
IRF1405ZSTRLPBF Power Field-Effect Transistor, 75A I(D), 55V, 0.0049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 International Rectifier AUIRF3710Z vs IRF1405ZSTRLPBF
IRFS4321TRRPBF Power Field-Effect Transistor, 75A I(D), 150V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 International Rectifier AUIRF3710Z vs IRFS4321TRRPBF
2N6767 TRANSISTOR,MOSFET,N-CHANNEL,350V V(BR)DSS,12A I(D),TO-3 Intersil Corporation AUIRF3710Z vs 2N6767
IRFZ46NSPBF Power Field-Effect Transistor, 39A I(D), 55V, 0.0165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 International Rectifier AUIRF3710Z vs IRFZ46NSPBF
AUIRF4104STRL Power Field-Effect Transistor, 75A I(D), 40V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, D2PAK-3 International Rectifier AUIRF3710Z vs AUIRF4104STRL
IRFZ48ZSPBF Power Field-Effect Transistor, 61A I(D), 55V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 International Rectifier AUIRF3710Z vs IRFZ48ZSPBF
IRF350 15A, 400V, 0.3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA Motorola Mobility LLC AUIRF3710Z vs IRF350
MTP2N20 Power Field-Effect Transistor, 2A I(D), 200V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Motorola Semiconductor Products AUIRF3710Z vs MTP2N20
IRFZ46NSTRLPBF Power Field-Effect Transistor, 39A I(D), 55V, 0.0165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 International Rectifier AUIRF3710Z vs IRFZ46NSTRLPBF
IRF2807SPBF Power Field-Effect Transistor, 75A I(D), 75V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 International Rectifier AUIRF3710Z vs IRF2807SPBF

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