Datasheets
AUIRF3710Z by:

Power Field-Effect Transistor, 59A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3

Part Details for AUIRF3710Z by Infineon Technologies AG

Overview of AUIRF3710Z by Infineon Technologies AG

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Applications Consumer Electronics Energy and Power Systems Renewable Energy Automotive

Price & Stock for AUIRF3710Z

Part # Distributor Description Stock Price Buy
DISTI # 70019347
RS AUIRF3710Z N-channel MOSFET Transistor, 59 A, 100 V, 3-Pin TO-220AB | Infineon AUIRF3710Z RoHS: Not Compliant Min Qty: 5 Package Multiple: 1 Container: Bulk 0
  • 5 $2.5000
  • 25 $2.3700
  • 50 $2.2500
  • 500 $2.1200
  • 1,250 $2.0000
$2.0000 / $2.5000 RFQ
DISTI # 1813396
element14 Asia-Pacific MOSFET, N CH, 100V, 59A, TO220AB RoHS: Compliant Min Qty: 1 Container: Each 0
  • 1 $2.9231
  • 10 $2.4138
  • 100 $2.0004
  • 500 $1.8085
  • 1,000 $1.6313
$1.6313 / $2.9231 Buy Now
DISTI # 1813396
Farnell MOSFET, N CH, 100V, 59A, TO220AB RoHS: Compliant Min Qty: 1 Lead time: 53 Weeks, 2 Days Container: Each 0
  • 1 $1.2020
$1.2020 Buy Now

Part Details for AUIRF3710Z

AUIRF3710Z CAD Models

AUIRF3710Z Part Data Attributes:

AUIRF3710Z Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
AUIRF3710Z Infineon Technologies AG Power Field-Effect Transistor, 59A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description TO-220AB, 3 PIN
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 200 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 59 A
Drain-source On Resistance-Max 0.018 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 150 pF
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 160 W
Pulsed Drain Current-Max (IDM) 240 A
Qualification Status Not Qualified
Reference Standard AEC-Q101
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 97 ns
Turn-on Time-Max (ton) 94 ns

Alternate Parts for AUIRF3710Z

This table gives cross-reference parts and alternative options found for AUIRF3710Z. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of AUIRF3710Z, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRF3710ZPBF Power Field-Effect Transistor, 59A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3 International Rectifier AUIRF3710Z vs IRF3710ZPBF
IRF3710ZPBF Power Field-Effect Transistor, 59A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3 Infineon Technologies AG AUIRF3710Z vs IRF3710ZPBF
AUIRF3710Z Power Field-Effect Transistor, 59A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3 International Rectifier AUIRF3710Z vs AUIRF3710Z
IRF3710Z Power Field-Effect Transistor, 59A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN International Rectifier AUIRF3710Z vs IRF3710Z
Part Number Description Manufacturer Compare
IRF3710Z Power Field-Effect Transistor, 59A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN International Rectifier AUIRF3710Z vs IRF3710Z
IRF3710ZPBF Power Field-Effect Transistor, 59A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3 Infineon Technologies AG AUIRF3710Z vs IRF3710ZPBF

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