Datasheets
AU5517DR2 by: onsemi

Dual Transconductance Amplifier, SOIC 16 LEAD, 2500-REEL

Part Details for AU5517DR2 by onsemi

Overview of AU5517DR2 by onsemi

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Applications Education and Research Industrial Automation Electronic Manufacturing

Price & Stock for AU5517DR2

Part # Distributor Description Stock Price Buy
DISTI # 72AK8944
Newark Au5517Dr2, Single Bipolar Transistors |Onsemi AU5517DR2 Min Qty: 560 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 500 $0.8670
  • 1,000 $0.7550
  • 2,500 $0.6130
  • 10,000 $0.5930
$0.5930 / $0.8670 Buy Now
Rochester Electronics Operational Amplifier, 2 Func, 5000uV Offset-Max, BIPolar, PDSO16 ' RoHS: Compliant Status: Obsolete Min Qty: 1 1935
  • 1 $0.6598
  • 25 $0.6466
  • 100 $0.6202
  • 500 $0.5938
  • 1,000 $0.5608
$0.5608 / $0.6598 Buy Now
DISTI # 4182237
Farnell AU5517DR2, SINGLE BIPOLAR TRANSISTORS RoHS: Compliant Min Qty: 2500 Lead time: 3 Weeks, 1 Days Container: Each 1935
  • 2,500 $1.2125
$1.2125 Buy Now

Part Details for AU5517DR2

AU5517DR2 CAD Models

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AU5517DR2 Part Data Attributes:

AU5517DR2 onsemi
Buy Now Datasheet
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AU5517DR2 onsemi Dual Transconductance Amplifier, SOIC 16 LEAD, 2500-REEL
Pbfree Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer ONSEMI
Part Package Code SOIC 16 LEAD
Package Description SOIC-16
Pin Count 16
Manufacturer Package Code 751B-05
Reach Compliance Code not_compliant
ECCN Code EAR99
HTS Code 8542.33.00.01
Factory Lead Time 4 Weeks
Samacsys Manufacturer onsemi
Amplifier Type OPERATIONAL AMPLIFIER
Architecture TRANSCONDUCTANCE
Average Bias Current-Max (IIB) 8 µA
Bias Current-Max (IIB) @25C 5 µA
Common-mode Reject Ratio-Nom 110 dB
Frequency Compensation YES
Input Offset Voltage-Max 5000 µV
JESD-30 Code R-PDSO-G16
JESD-609 Code e0
Length 9.9 mm
Low-Offset NO
Neg Supply Voltage Limit-Max -22 V
Neg Supply Voltage-Nom (Vsup) -15 V
Number of Functions 2
Number of Terminals 16
Operating Temperature-Max 125 °C
Operating Temperature-Min -40 °C
Package Body Material PLASTIC/EPOXY
Package Code SOP
Package Equivalence Code SOP16,.25
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Packing Method RAIL
Peak Reflow Temperature (Cel) 235
Qualification Status Not Qualified
Seated Height-Max 1.75 mm
Slew Rate-Nom 50 V/us
Supply Current-Max 4 mA
Supply Voltage Limit-Max 22 V
Supply Voltage-Nom (Vsup) 15 V
Surface Mount YES
Technology BIPOLAR
Temperature Grade AUTOMOTIVE
Terminal Finish TIN LEAD
Terminal Form GULL WING
Terminal Pitch 1.27 mm
Terminal Position DUAL
Unity Gain BW-Nom 2000
Width 3.9 mm

Alternate Parts for AU5517DR2

This table gives cross-reference parts and alternative options found for AU5517DR2. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of AU5517DR2, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
AU5517D IC DUAL OP-AMP, 5000 uV OFFSET-MAX, PDSO16, 3.90 MM, PLASTIC, MS-012, SOT109-1, SO-16, Operational Amplifier NXP Semiconductors AU5517DR2 vs AU5517D
AU5517DR2G Dual Transconductance Amplifier -40 to +125 oC, SOIC 16 LEAD, 2500-REEL onsemi AU5517DR2 vs AU5517DR2G
Part Number Description Manufacturer Compare
LM13700MX/NOPB IC DUAL OP-AMP, 4000 uV OFFSET-MAX, 2 MHz BAND WIDTH, PDSO16, ROHS COMPLIANT, SOP-16, Operational Amplifier National Semiconductor Corporation AU5517DR2 vs LM13700MX/NOPB
NJM13700M-(T2) Operational Amplifier, 2 Func, 5000uV Offset-Max, BIPolar, PDSO16, DMP-16 New Japan Radio Co Ltd AU5517DR2 vs NJM13700M-(T2)
NJM13700M Operational Amplifier, 2 Func, 4000uV Offset-Max, BIPolar, PDSO16, DMP-16 New Japan Radio Co Ltd AU5517DR2 vs NJM13700M
NJM13700M-(TE1) Operational Amplifier, 2 Func, 5000uV Offset-Max, BIPolar, PDSO16, DMP-16 New Japan Radio Co Ltd AU5517DR2 vs NJM13700M-(TE1)
LM13600M DUAL OP-AMP, 4000uV OFFSET-MAX, 2MHz BAND WIDTH, PDSO16, SOP-16 Rochester Electronics LLC AU5517DR2 vs LM13600M
LM13600M IC DUAL OP-AMP, 4000 uV OFFSET-MAX, 2 MHz BAND WIDTH, PDSO16, SOP-16, Operational Amplifier National Semiconductor Corporation AU5517DR2 vs LM13600M
NE5517DG Dual Transconductance Amplifier 0 to +70 oC, SOIC 16 LEAD, 48-TUBE onsemi AU5517DR2 vs NE5517DG
LM13600M DUAL OP-AMP, 4000uV OFFSET-MAX, 2MHz BAND WIDTH, PDSO16, SOP-16 Texas Instruments AU5517DR2 vs LM13600M
LM13700MX IC DUAL OP-AMP, 4000 uV OFFSET-MAX, 2 MHz BAND WIDTH, PDSO16, PLASTIC, SOP-16, Operational Amplifier National Semiconductor Corporation AU5517DR2 vs LM13700MX
AU5517DR2G Dual Transconductance Amplifier -40 to +125 oC, SOIC 16 LEAD, 2500-REEL onsemi AU5517DR2 vs AU5517DR2G

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