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P-Channel Power MOSFET, -60V, -70A, 13mΩ, DPAK (Single Gauge) / ATPAK, 3000-REEL
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
13AC6082
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Newark | Mosfet, P-Ch, -60V, -70A, Atpak, Channel Type:P Channel, Drain Source Voltage Vds:60V, Continuous Drain Current Id:70A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2.6V, Msl:- Rohs Compliant: Yes |Onsemi ATP302-TL-H Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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Buy Now | |
DISTI #
52T7542
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Newark | Pch 4.5V Drive Series/Reel |Onsemi ATP302-TL-H Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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Buy Now | |
DISTI #
ATP302-TL-H
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Avnet Americas | Trans MOSFET P-CH 60V 70A 3-Pin(2+Tab) ATPAK T/R - Tape and Reel (Alt: ATP302-TL-H) RoHS: Compliant Min Qty: 197 Package Multiple: 1 Lead time: 0 Weeks, 2 Days Container: Reel | 6000 Partner Stock |
|
$3.1620 / $3.7740 | Buy Now |
DISTI #
ATP302-TL-H
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Avnet Americas | Trans MOSFET P-CH 60V 70A 3-Pin(2+Tab) ATPAK T/R - Tape and Reel (Alt: ATP302-TL-H) RoHS: Compliant Min Qty: 197 Package Multiple: 1 Lead time: 0 Weeks, 2 Days Container: Reel | 6000 Partner Stock |
|
$3.1620 / $3.7740 | Buy Now |
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Flip Electronics | Stock, ship today | 3600 |
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$2.5500 | RFQ |
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Win Source Electronics | MOSFET P-CH 60V 70A ATPAK | 31333 |
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$4.7110 / $7.0660 | Buy Now |
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ATP302-TL-H
onsemi
Buy Now
Datasheet
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ATP302-TL-H
onsemi
P-Channel Power MOSFET, -60V, -70A, 13mΩ, DPAK (Single Gauge) / ATPAK, 3000-REEL
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | ONSEMI | |
Package Description | HALOGEN AND LEAD FREE, ATPAK-3/2 | |
Pin Count | 3 | |
Manufacturer Package Code | 369AM | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | onsemi | |
Avalanche Energy Rating (Eas) | 197 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 70 A | |
Drain-source On Resistance-Max | 0.018 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e6 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation-Max (Abs) | 70 W | |
Pulsed Drain Current-Max (IDM) | 280 A | |
Surface Mount | YES | |
Terminal Finish | TIN BISMUTH | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Element Material | SILICON |