Part Details for ATP112 by SANYO Semiconductor Co Ltd
Overview of ATP112 by SANYO Semiconductor Co Ltd
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Part Details for ATP112
ATP112 CAD Models
ATP112 Part Data Attributes
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ATP112
SANYO Semiconductor Co Ltd
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ATP112
SANYO Semiconductor Co Ltd
Power Field-Effect Transistor, 25A I(D), 60V, 0.043ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE, ATPAK-3
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| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | SANYO SEMICONDUCTOR CO LTD | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Pin Count | 3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 50 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 25 A | |
| Drain-source On Resistance-Max | 0.043 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSSO-G2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | P-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 75 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |