Part Details for ATF-511P8-TR1 by Broadcom Limited
Overview of ATF-511P8-TR1 by Broadcom Limited
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (5 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Environmental Monitoring
Space Technology
Audio and Video Systems
Telecommunications
Renewable Energy
Price & Stock for ATF-511P8-TR1
| Part # | Distributor | Description | Stock | Price | Buy | |
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Win Source Electronics | FET RF 7V 2GHZ 8-LPCC | 7681 |
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$9.4210 / $14.1310 | Buy Now |
Part Details for ATF-511P8-TR1
ATF-511P8-TR1 CAD Models
ATF-511P8-TR1 Part Data Attributes
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ATF-511P8-TR1
Broadcom Limited
Buy Now
Datasheet
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Compare Parts:
ATF-511P8-TR1
Broadcom Limited
RF Power Field-Effect Transistor, 1-Element, C Band, Silicon, N-Channel, High Electron Mobility FET, 2 X 2 MM, 0.75 MM HEIGHT, LPCC-8
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | BROADCOM LTD | |
| Package Description | SMALL OUTLINE, R-PDSO-N8 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.75 | |
| Additional Feature | LOW NOISE | |
| Case Connection | SOURCE | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 7 V | |
| Drain Current-Max (ID) | 1 A | |
| FET Technology | HIGH ELECTRON MOBILITY | |
| Highest Frequency Band | C BAND | |
| JESD-30 Code | R-PDSO-N8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 3 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | NO LEAD | |
| Terminal Position | DUAL | |
| Transistor Application | AMPLIFIER | |
| Transistor Element Material | SILICON |
Alternate Parts for ATF-511P8-TR1
This table gives cross-reference parts and alternative options found for ATF-511P8-TR1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of ATF-511P8-TR1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| ATF-511P8-BLK | RF Power Field-Effect Transistor, 1-Element, C Band, Silicon, N-Channel, High Electron Mobility FET, 2 X 2 MM, 0.75 MM HEIGHT, LPCC-8 | Broadcom Limited | ATF-511P8-TR1 vs ATF-511P8-BLK |
| ATF-511P8-TR2 | RF Power Field-Effect Transistor, 1-Element, C Band, Silicon, N-Channel, High Electron Mobility FET, 2 X 2 MM, 0.75 MM HEIGHT, LPCC-8 | Broadcom Limited | ATF-511P8-TR1 vs ATF-511P8-TR2 |
| ATF-511P8-TR2G | RF Power Field-Effect Transistor, 1-Element, C Band, Silicon, N-Channel, High Electron Mobility FET, 2 X 2 MM, 0.75 MM HEIGHT, LPCC-8 | Agilent Technologies Inc | ATF-511P8-TR1 vs ATF-511P8-TR2G |
| ATF-511P8-BLK | C BAND, Si, N-CHANNEL, RF POWER, HEMFET, 2 X 2 MM, 0.75 MM HEIGHT, LPCC-8 | Avago Technologies | ATF-511P8-TR1 vs ATF-511P8-BLK |
| ATF-511P8-BLK | RF Power Field-Effect Transistor, 1-Element, C Band, Silicon, N-Channel, High Electron Mobility FET, 2 X 2 MM, 0.75 MM HEIGHT, LPCC-8 | Agilent Technologies Inc | ATF-511P8-TR1 vs ATF-511P8-BLK |