Part Details for ATF-45171 by Hewlett Packard Co
Overview of ATF-45171 by Hewlett Packard Co
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Applications
Environmental Monitoring
Space Technology
Telecommunications
Part Details for ATF-45171
ATF-45171 CAD Models
ATF-45171 Part Data Attributes
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ATF-45171
Hewlett Packard Co
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Datasheet
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ATF-45171
Hewlett Packard Co
RF Small Signal Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET
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Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | HEWLETT PACKARD CO | |
Package Description | FLANGE MOUNT, R-CDFM-F2 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.75 | |
Case Connection | SOURCE | |
Configuration | SINGLE | |
DS Breakdown Voltage-Min | 14 V | |
Drain Current-Max (ID) | 0.8 A | |
FET Technology | METAL SEMICONDUCTOR | |
Highest Frequency Band | C BAND | |
JESD-30 Code | R-CDFM-F2 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | DEPLETION MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation Ambient-Max | 3.6 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Form | FLAT | |
Terminal Position | DUAL | |
Transistor Application | AMPLIFIER | |
Transistor Element Material | GALLIUM ARSENIDE |