Part Details for ATF-36077-STR by Agilent Technologies Inc
Overview of ATF-36077-STR by Agilent Technologies Inc
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Environmental Monitoring
Space Technology
Telecommunications
Part Details for ATF-36077-STR
ATF-36077-STR CAD Models
ATF-36077-STR Part Data Attributes:
|
|
ATF-36077-STR
Agilent Technologies Inc
Buy Now
Datasheet
|
Compare Parts:
ATF-36077-STR
Agilent Technologies Inc
RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, CERAMIC, MICROSTRIP PACKAGE-4
|
| Rohs Code | No | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | AGILENT TECHNOLOGIES INC | |
| Package Description | DISK BUTTON, O-CRDB-F4 | |
| Pin Count | 4 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.21.00.95 | |
| Additional Feature | LOW NOISE | |
| Case Connection | SOURCE | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 3 V | |
| Drain Current-Max (ID) | 0.045 A | |
| FET Technology | HIGH ELECTRON MOBILITY | |
| Highest Frequency Band | KU BAND | |
| JESD-30 Code | O-CRDB-F4 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | DEPLETION MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
| Package Shape | ROUND | |
| Package Style | DISK BUTTON | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 0.18 W | |
| Power Gain-Min (Gp) | 11 dB | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | FLAT | |
| Terminal Position | RADIAL | |
| Transistor Application | AMPLIFIER | |
| Transistor Element Material | GALLIUM ARSENIDE |
Alternate Parts for ATF-36077-STR
This table gives cross-reference parts and alternative options found for ATF-36077-STR. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of ATF-36077-STR, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| ATF-36077TR1 | KU BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET | Agilent Technologies Inc | ATF-36077-STR vs ATF-36077TR1 |
| ATF-36077-TR | X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET, CERAMIC, MICROSTRIP PACKAGE-4 | Avago Technologies | ATF-36077-STR vs ATF-36077-TR |
| ATF-36077-TR1 | RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, CERAMIC, MICROSTRIP PACKAGE-4 | Broadcom Limited | ATF-36077-STR vs ATF-36077-TR1 |
| ATF-36077-TRI | RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, CERAMIC, MICROSTRIP PACKAGE-4 | Broadcom Limited | ATF-36077-STR vs ATF-36077-TRI |
| ATF-36077-STR | RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, CERAMIC, MICROSTRIP PACKAGE-4 | Broadcom Limited | ATF-36077-STR vs ATF-36077-STR |
| ATF-36077-TRI | RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, CERAMIC, MICROSTRIP PACKAGE-4 | Agilent Technologies Inc | ATF-36077-STR vs ATF-36077-TRI |
| ATF-36077-TR1 | KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET | Hewlett Packard Co | ATF-36077-STR vs ATF-36077-TR1 |
| ATF-36077STR | KU BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET | Agilent Technologies Inc | ATF-36077-STR vs ATF-36077STR |
| ATF-36077-TR | RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, CERAMIC, MICROSTRIP PACKAGE-4 | Broadcom Limited | ATF-36077-STR vs ATF-36077-TR |
| ATF-36077-STRG | RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, CERAMIC, MICROSTRIP PACKAGE-4 | Agilent Technologies Inc | ATF-36077-STR vs ATF-36077-STRG |