Part Details for ATF-25735 by Hewlett Packard Co
Overview of ATF-25735 by Hewlett Packard Co
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Part Details for ATF-25735
ATF-25735 CAD Models
ATF-25735 Part Data Attributes:
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ATF-25735
Hewlett Packard Co
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Datasheet
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ATF-25735
Hewlett Packard Co
RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET
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Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | HEWLETT PACKARD CO | |
Package Description | MICROWAVE, S-CXMW-F4 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8541.21.00.75 | |
Configuration | SINGLE | |
DS Breakdown Voltage-Min | 7 V | |
Drain Current-Max (ID) | 0.15 A | |
FET Technology | METAL SEMICONDUCTOR | |
Highest Frequency Band | X BAND | |
JESD-30 Code | S-CXMW-F4 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 4 | |
Operating Mode | DEPLETION MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
Package Shape | SQUARE | |
Package Style | MICROWAVE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation Ambient-Max | 0.45 W | |
Power Gain-Min (Gp) | 11.5 dB | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Tin/Lead (Sn/Pb) | |
Terminal Form | FLAT | |
Terminal Position | UNSPECIFIED | |
Transistor Application | AMPLIFIER | |
Transistor Element Material | GALLIUM ARSENIDE |