Part Details for ATF-25170 by Hewlett Packard Co
Overview of ATF-25170 by Hewlett Packard Co
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Applications
Computing and Data Storage
Part Details for ATF-25170
ATF-25170 CAD Models
ATF-25170 Part Data Attributes:
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ATF-25170
Hewlett Packard Co
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Datasheet
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ATF-25170
Hewlett Packard Co
RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | HEWLETT PACKARD CO | |
| Package Description | MICROWAVE, S-CQMW-F4 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.21.00.75 | |
| Additional Feature | LOW NOISE | |
| Case Connection | SOURCE | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 7 V | |
| Drain Current-Max (ID) | 0.15 A | |
| FET Technology | METAL SEMICONDUCTOR | |
| Highest Frequency Band | X BAND | |
| JESD-30 Code | S-CQMW-F4 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | DEPLETION MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
| Package Shape | SQUARE | |
| Package Style | MICROWAVE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 0.45 W | |
| Power Gain-Min (Gp) | 13 dB | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Terminal Form | FLAT | |
| Terminal Position | QUAD | |
| Transistor Application | AMPLIFIER | |
| Transistor Element Material | GALLIUM ARSENIDE |