Datasheets
AT25DN011-MAHF-T by:
Adesto Technologies Corporation
Adesto Technologies Corporation
Dialog Semiconductor GmbH
Renesas Electronics Corporation
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IC FLASH 1MBIT 104MHZ 8UDFN

Part Details for AT25DN011-MAHF-T by Adesto Technologies Corporation

Results Overview of AT25DN011-MAHF-T by Adesto Technologies Corporation

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AT25DN011-MAHF-T Information

AT25DN011-MAHF-T by Adesto Technologies Corporation is a Flash Memory.
Flash Memories are under the broader part category of Memory Components.

Memory components are essential in electronics for computer processing. They can be volatile or non-volatile, depending on the desired function. Read more about Memory Components on our Memory part category page.

Available Datasheets

Part # Manufacturer Description Datasheet
AT25DN011-MAHF-T Renesas Electronics Corporation 1Mbit, 2.3V to 3.6V Range SPI Serial Flash Memory with Dual-Read Support
AT25DN011-MAHF-Y Renesas Electronics Corporation 1Mbit, 2.3V to 3.6V Range SPI Serial Flash Memory with Dual-Read Support
AT25DN011-XMHF-B Renesas Electronics Corporation 1Mbit, 2.3V to 3.6V Range SPI Serial Flash Memory with Dual-Read Support

Price & Stock for AT25DN011-MAHF-T

Part # Distributor Description Stock Price Buy
DISTI # 78AH9351
Newark 8-Udfn (2X3X0.6), Ind Temp, 2.3V, T&r Rohs Compliant: Yes |ADESTO TECHNOLOGIES AT25DN011-MAHF-T RoHS: Compliant Min Qty: 5000 Package Multiple: 1 Date Code: 0 Container: Reel 5000
  • 3,000 $0.5580
  • 6,000 $0.5070
  • 12,000 $0.4570
  • 18,000 $0.4400
  • 30,000 $0.4300
$0.4300 / $0.5580 Buy Now

Part Details for AT25DN011-MAHF-T

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AT25DN011-MAHF-T Part Data Attributes

AT25DN011-MAHF-T Adesto Technologies Corporation
Buy Now Datasheet
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AT25DN011-MAHF-T Adesto Technologies Corporation IC FLASH 1MBIT 104MHZ 8UDFN
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Pbfree Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer ADESTO TECHNOLOGIES CORP
Package Description UDFN-8
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8542.32.00.51
Samacsys Manufacturer Adesto Technologies
Clock Frequency-Max (fCLK) 104 MHz
Data Retention Time-Min 20
Endurance 100000 Write/Erase Cycles
JESD-30 Code R-PDSO-N8
Length 3 mm
Memory Density 1048576 bit
Memory IC Type FLASH
Memory Width 8
Number of Functions 1
Number of Terminals 8
Number of Words 131072 words
Number of Words Code 128000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 85 °C
Operating Temperature-Min -40 °C
Organization 128KX8
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code HVSON
Package Equivalence Code SOLCC8,.12,20
Package Shape RECTANGULAR
Package Style SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE
Parallel/Serial SERIAL
Programming Voltage 3 V
Seated Height-Max 0.6 mm
Serial Bus Type DSPI
Standby Current-Max 0.000015 A
Supply Current-Max 0.018 mA
Supply Voltage-Max (Vsup) 3.6 V
Supply Voltage-Min (Vsup) 2.3 V
Supply Voltage-Nom (Vsup) 3 V
Surface Mount YES
Technology CMOS
Temperature Grade INDUSTRIAL
Terminal Form NO LEAD
Terminal Pitch 0.5 mm
Terminal Position DUAL
Type NOR TYPE
Width 2 mm
Write Protection HARDWARE/SOFTWARE

AT25DN011-MAHF-T Frequently Asked Questions (FAQ)

  • The recommended operating voltage range for the AT25DN011-MAHF-T is 1.7V to 3.6V.

  • The AT25DN011-MAHF-T allows up to 256 bytes to be written in a single write operation.

  • The WP (Write Protect) pin is used to prevent writes to the status register and the memory array. When the WP pin is low, the device is in write-protect mode.

  • The AT25DN011-MAHF-T uses a page write buffer to handle page writes. The buffer is 256 bytes long, and the device automatically writes the buffer to the memory array when the buffer is full or when a page write command is issued.

  • The AT25DN011-MAHF-T supports up to 100,000 erase cycles.