Datasheets
ASI2223-4 by: Advanced Semiconductor Inc

RF Power Bipolar Transistor, 1-Element, S Band, Silicon, NPN, FM-2

Part Details for ASI2223-4 by Advanced Semiconductor Inc

Overview of ASI2223-4 by Advanced Semiconductor Inc

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Part Details for ASI2223-4

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ASI2223-4 Part Data Attributes

ASI2223-4 Advanced Semiconductor Inc
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ASI2223-4 Advanced Semiconductor Inc RF Power Bipolar Transistor, 1-Element, S Band, Silicon, NPN, FM-2
Part Life Cycle Code Active
Ihs Manufacturer ASI SEMICONDUCTOR INC
Package Description FLANGE MOUNT, R-CDFM-F2
Pin Count 2
Reach Compliance Code unknown
ECCN Code EAR99
Collector Current-Max (IC) 0.75 A
Collector-Emitter Voltage-Max 26 V
Configuration SINGLE
DC Current Gain-Min (hFE) 10
Highest Frequency Band S BAND
JESD-30 Code R-CDFM-F2
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 200 °C
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type NPN
Power Dissipation-Max (Abs) 15.9 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Form FLAT
Terminal Position DUAL
Transistor Application AMPLIFIER
Transistor Element Material SILICON

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