Datasheets
ASI10835 by: Advanced Semiconductor Inc

RF Power Bipolar Transistor, Ultra High Frequency Band, Silicon, NPN, FM-4

Part Details for ASI10835 by Advanced Semiconductor Inc

Overview of ASI10835 by Advanced Semiconductor Inc

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Applications Energy and Power Systems Medical Imaging Robotics and Drones

Part Details for ASI10835

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ASI10835 Part Data Attributes

ASI10835 Advanced Semiconductor Inc
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ASI10835 Advanced Semiconductor Inc RF Power Bipolar Transistor, Ultra High Frequency Band, Silicon, NPN, FM-4
Part Life Cycle Code Active
Ihs Manufacturer ASI SEMICONDUCTOR INC
Package Description FLANGE MOUNT, R-CDFM-F4
Pin Count 4
Reach Compliance Code unknown
ECCN Code EAR99
Case Connection EMITTER
Collector Current-Max (IC) 2.6 A
Collector-Base Capacitance-Max 20 pF
Collector-Emitter Voltage-Max 25 V
Highest Frequency Band ULTRA HIGH FREQUENCY BAND
JESD-30 Code R-CDFM-F4
Number of Terminals 4
Operating Temperature-Max 200 °C
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type NPN
Qualification Status Not Qualified
Surface Mount YES
Terminal Form FLAT
Terminal Position DUAL
Transistor Application AMPLIFIER
Transistor Element Material SILICON

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