Datasheets
ASI10666 by: Advanced Semiconductor Inc

RF Power Field-Effect Transistor, 1-Element, Silicon,

Part Details for ASI10666 by Advanced Semiconductor Inc

Results Overview of ASI10666 by Advanced Semiconductor Inc

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Applications Education and Research Consumer Electronics Internet of Things (IoT) Audio and Video Systems Computing and Data Storage Aerospace and Defense Healthcare Telecommunications Automotive

ASI10666 Information

ASI10666 by Advanced Semiconductor Inc is an RF Power Field-Effect Transistor.
RF Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Part Details for ASI10666

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ASI10666 Part Data Attributes

ASI10666 Advanced Semiconductor Inc
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ASI10666 Advanced Semiconductor Inc RF Power Field-Effect Transistor, 1-Element, Silicon,
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Part Life Cycle Code Active
Ihs Manufacturer ASI SEMICONDUCTOR INC
Reach Compliance Code unknown
ECCN Code EAR99
Configuration SINGLE
JESD-30 Code O-CRPM-F4
Number of Elements 1
Number of Terminals 4
Operating Temperature-Max 200 °C
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape ROUND
Package Style POST/STUD MOUNT
Qualification Status Not Qualified
Surface Mount NO
Terminal Form FLAT
Terminal Position RADIAL
Transistor Element Material SILICON