Datasheets
ASI10589 by: Advanced Semiconductor Inc

RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, 0.500 INCH, FM-6

Part Details for ASI10589 by Advanced Semiconductor Inc

Overview of ASI10589 by Advanced Semiconductor Inc

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Applications Education and Research Internet of Things (IoT) Computing and Data Storage Aerospace and Defense Healthcare Renewable Energy Telecommunications Automotive

Part Details for ASI10589

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ASI10589 Part Data Attributes

ASI10589 Advanced Semiconductor Inc
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ASI10589 Advanced Semiconductor Inc RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, 0.500 INCH, FM-6
Part Life Cycle Code Active
Ihs Manufacturer ASI SEMICONDUCTOR INC
Package Description FLANGE MOUNT, O-CXFM-F6
Pin Count 6
Reach Compliance Code unknown
ECCN Code EAR99
Collector Current-Max (IC) 16 A
Collector-Base Capacitance-Max 150 pF
Collector-Emitter Voltage-Max 25 V
Configuration SINGLE
Highest Frequency Band VERY HIGH FREQUENCY BAND
JESD-30 Code O-CXFM-F6
Number of Elements 1
Number of Terminals 6
Operating Temperature-Max 200 °C
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape ROUND
Package Style FLANGE MOUNT
Polarity/Channel Type NPN
Qualification Status Not Qualified
Surface Mount YES
Terminal Form FLAT
Terminal Position UNSPECIFIED
Transistor Application AMPLIFIER
Transistor Element Material SILICON

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