Part Details for AS4LC4M4E0-60TC by Alliance Semiconductor Corporation
Overview of AS4LC4M4E0-60TC by Alliance Semiconductor Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Computing and Data Storage
Financial Technology (Fintech)
Part Details for AS4LC4M4E0-60TC
AS4LC4M4E0-60TC CAD Models
AS4LC4M4E0-60TC Part Data Attributes:
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AS4LC4M4E0-60TC
Alliance Semiconductor Corporation
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Datasheet
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AS4LC4M4E0-60TC
Alliance Semiconductor Corporation
EDO DRAM, 4MX4, 60ns, CMOS, PDSO24, 0.300 INCH, PLASTIC, TSOP-26/24
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | ALLIANCE SEMICONDUCTOR CORP | |
| Part Package Code | TSOP | |
| Package Description | SOP, TSOP24/26,.36 | |
| Pin Count | 26/24 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.02 | |
| Access Mode | FAST PAGE WITH EDO | |
| Access Time-Max | 60 ns | |
| Additional Feature | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH | |
| I/O Type | COMMON | |
| JESD-30 Code | R-PDSO-G24 | |
| JESD-609 Code | e0 | |
| Memory Density | 16777216 bit | |
| Memory IC Type | EDO DRAM | |
| Memory Width | 4 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 24 | |
| Number of Words | 4194304 words | |
| Number of Words Code | 4000000 | |
| Operating Mode | ASYNCHRONOUS | |
| Operating Temperature-Max | 70 °C | |
| Operating Temperature-Min | ||
| Organization | 4MX4 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | SOP | |
| Package Equivalence Code | TSOP24/26,.36 | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 240 | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 4096 | |
| Self Refresh | YES | |
| Standby Current-Max | 0.001 A | |
| Supply Current-Max | 0.11 mA | |
| Supply Voltage-Max (Vsup) | 3.6 V | |
| Supply Voltage-Min (Vsup) | 3 V | |
| Supply Voltage-Nom (Vsup) | 3.3 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | COMMERCIAL | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | GULL WING | |
| Terminal Pitch | 1.27 mm | |
| Terminal Position | DUAL |
Alternate Parts for AS4LC4M4E0-60TC
This table gives cross-reference parts and alternative options found for AS4LC4M4E0-60TC. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of AS4LC4M4E0-60TC, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| AS4C4M4DG-6/IT | Fast Page DRAM, 4MX4, 60ns, CMOS, PDSO24, TSOP-24 | Micross Components | AS4LC4M4E0-60TC vs AS4C4M4DG-6/IT |
| HY51V17404ALT-70 | EDO DRAM, 4MX4, 70ns, CMOS, 0.400 INCH, TSOP2 | SK Hynix Inc | AS4LC4M4E0-60TC vs HY51V17404ALT-70 |
| UPD42S16400G3M-80 | Fast Page DRAM, 4MX4, 80ns, CMOS, PDSO24, 0.300 INCH, PLASTIC, REVERSE, TSOP2-26/24 | NEC Electronics America Inc | AS4LC4M4E0-60TC vs UPD42S16400G3M-80 |
| TC5116100BSR-70 | IC 16M X 1 FAST PAGE DRAM, 70 ns, PDSO24, REVERSE, TSOP2-28/24, Dynamic RAM | Toshiba America Electronic Components | AS4LC4M4E0-60TC vs TC5116100BSR-70 |
| HY51V17404ALT-80 | EDO DRAM, 4MX4, 80ns, CMOS, 0.400 INCH, TSOP2 | SK Hynix Inc | AS4LC4M4E0-60TC vs HY51V17404ALT-80 |
| UPD4216100G3M-50 | 16MX1 FAST PAGE DRAM, 50ns, PDSO24, 0.300 INCH, PLASTIC, REVERSE, TSOP2-26/24 | Renesas Electronics Corporation | AS4LC4M4E0-60TC vs UPD4216100G3M-50 |
| HYB5117400BJ-70 | Fast Page DRAM, 4MX4, 70ns, CMOS, PDSO24, 0.300 INCH, PLASTIC, SOJ-24 | Siemens | AS4LC4M4E0-60TC vs HYB5117400BJ-70 |
| KM44C4112TR-8 | Static Column DRAM, 4MX4, 80ns, CMOS, PDSO24, REVERSE, TSOP2-24 | Samsung Semiconductor | AS4LC4M4E0-60TC vs KM44C4112TR-8 |
| MN42V16400ATT | Fast Page DRAM, 4MX4, 70ns, MOS, PDSO24, 0.300 INCH, PLASTIC, TSOP-26/24 | Panasonic Electronic Components | AS4LC4M4E0-60TC vs MN42V16400ATT |
| HY51V17404ALJ-60 | EDO DRAM, 4MX4, 60ns, CMOS, 0.300 INCH, SOJ | SK Hynix Inc | AS4LC4M4E0-60TC vs HY51V17404ALJ-60 |