Part Details for AS4LC1M16S1-10TC by Alliance Semiconductor Corporation
Overview of AS4LC1M16S1-10TC by Alliance Semiconductor Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
Renewable Energy
Robotics and Drones
Part Details for AS4LC1M16S1-10TC
AS4LC1M16S1-10TC CAD Models
AS4LC1M16S1-10TC Part Data Attributes:
|
|
AS4LC1M16S1-10TC
Alliance Semiconductor Corporation
Buy Now
Datasheet
|
Compare Parts:
AS4LC1M16S1-10TC
Alliance Semiconductor Corporation
Synchronous DRAM, 1MX16, 6ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50
|
| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | ALLIANCE SEMICONDUCTOR CORP | |
| Part Package Code | TSOP2 | |
| Package Description | TSOP2, TSOP50,.46,32 | |
| Pin Count | 50 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.02 | |
| Access Mode | DUAL BANK PAGE BURST | |
| Access Time-Max | 6 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| Clock Frequency-Max (fCLK) | 100 MHz | |
| I/O Type | COMMON | |
| Interleaved Burst Length | 1,2,4,8 | |
| JESD-30 Code | R-PDSO-G50 | |
| JESD-609 Code | e0 | |
| Length | 20.95 mm | |
| Memory Density | 16777216 bit | |
| Memory IC Type | SYNCHRONOUS DRAM | |
| Memory Width | 16 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 50 | |
| Number of Words | 1048576 words | |
| Number of Words Code | 1000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 70 °C | |
| Operating Temperature-Min | ||
| Organization | 1MX16 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | TSOP2 | |
| Package Equivalence Code | TSOP50,.46,32 | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE, THIN PROFILE | |
| Peak Reflow Temperature (Cel) | 240 | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 4096 | |
| Seated Height-Max | 1.2 mm | |
| Self Refresh | YES | |
| Sequential Burst Length | 1,2,4,8,FP | |
| Standby Current-Max | 0.002 A | |
| Supply Current-Max | 0.12 mA | |
| Supply Voltage-Max (Vsup) | 3.6 V | |
| Supply Voltage-Min (Vsup) | 3 V | |
| Supply Voltage-Nom (Vsup) | 3.3 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | COMMERCIAL | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | GULL WING | |
| Terminal Pitch | 0.8 mm | |
| Terminal Position | DUAL | |
| Width | 10.16 mm |
Alternate Parts for AS4LC1M16S1-10TC
This table gives cross-reference parts and alternative options found for AS4LC1M16S1-10TC. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of AS4LC1M16S1-10TC, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| K4S161622H-UC800 | Synchronous DRAM, 1MX16, 6ns, CMOS, PDSO50, 0.400 X 0.825 INCH, 0.80 MM PITCH, ROHS COMPLIANT, TSOP2-50 | Samsung Semiconductor | AS4LC1M16S1-10TC vs K4S161622H-UC800 |
| KM416S1020CT-G8 | Synchronous DRAM, 1MX16, 6ns, CMOS, PDSO50, 0.400 X 0.825 INCH, 0.80 MM PITCH, TSOP2-50 | Samsung Semiconductor | AS4LC1M16S1-10TC vs KM416S1020CT-G8 |
| UPD4516161AG5-A10L-9NF | Synchronous DRAM, 1MX16, 6ns, MOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | Elpida Memory Inc | AS4LC1M16S1-10TC vs UPD4516161AG5-A10L-9NF |
| UPD4516161AG5-A80-9NF | 1MX16 SYNCHRONOUS DRAM, 6ns, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | Renesas Electronics Corporation | AS4LC1M16S1-10TC vs UPD4516161AG5-A80-9NF |
| UPD4516161AG5-A10L-9NF | Synchronous DRAM, 1MX16, 6ns, MOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | NEC Electronics America Inc | AS4LC1M16S1-10TC vs UPD4516161AG5-A10L-9NF |
| HY57V161610DLTC-10P | Synchronous DRAM, 1MX16, 6ns, CMOS, PDSO50, 0.400 X 0.825 INCH, 0.80 MM PITCH, TSOP2-50 | SK Hynix Inc | AS4LC1M16S1-10TC vs HY57V161610DLTC-10P |
| HY57V161610CTC-8 | Synchronous DRAM, 1MX16, 6ns, CMOS, PDSO50, 0.400 X 0.825 INCH, 0.80 MM PITCH, TSOP2-50 | SK Hynix Inc | AS4LC1M16S1-10TC vs HY57V161610CTC-8 |
| K4S161622D-TP10 | Synchronous DRAM, 1MX16, 6ns, CMOS, PDSO50, 0.400 X 0.825 INCH, 0.80 MM PITCH, TSOP2-50 | Samsung Semiconductor | AS4LC1M16S1-10TC vs K4S161622D-TP10 |
| VG3616161DT-7 | Synchronous DRAM, 1MX16, 6ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | Vanguard International Semiconductor Corporation | AS4LC1M16S1-10TC vs VG3616161DT-7 |
| HY57V161610CLTC-10S | Synchronous DRAM, 1MX16, 6ns, CMOS, PDSO50, 0.400 X 0.825 INCH, 0.80 MM PITCH, TSOP2-50 | SK Hynix Inc | AS4LC1M16S1-10TC vs HY57V161610CLTC-10S |