Datasheets
AS4C8M16SA-6TANTR by: Alliance Memory Inc

IC SDRAM 128MBIT 166MHZ 54TSOP

Part Details for AS4C8M16SA-6TANTR by Alliance Memory Inc

Overview of AS4C8M16SA-6TANTR by Alliance Memory Inc

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Applications Consumer Electronics Internet of Things (IoT) Computing and Data Storage Entertainment and Gaming

Price & Stock for AS4C8M16SA-6TANTR

Part # Distributor Description Stock Price Buy
DISTI # 85AK7159
Newark Sdr, 128Mb, 8M X 16, 3.3V, 54Pin Tsop Ii, 166 Mhz, Automotive Temp(.63), T&r, A Die |Alliance Memory AS4C8M16SA-6TANTR RoHS: Not Compliant Min Qty: 1000 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 1 $4.4000
  • 5,000 $4.2000
$4.2000 / $4.4000 Buy Now
DISTI # AS4C8M16SA-6TANTR-ND
DigiKey IC DRAM 128MBIT PAR 54TSOP II Min Qty: 1000 Lead time: 10 Weeks Container: Tape & Reel (TR) Temporarily Out of Stock
  • 1,000 $3.4421
$3.4421 Buy Now
DISTI # AS4C8M16SA-6TANTR
Avnet Americas DRAM Chip SDRAM 128Mbit 8M X 16 54-Pin TSOP-II T/R - Tape and Reel (Alt: AS4C8M16SA-6TANTR) RoHS: Not Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 10 Weeks, 0 Days Container: Reel 0
  • 1,000 $2.7720
$2.7720 Buy Now
DISTI # 913-4C8M16SA-6TANTR
Mouser Electronics DRAM SDR, 128Mb, 8M x 16, 3.3V, 54pin TSOP II, 166 Mhz, automotive temp(.63), T&R, A Die RoHS: Compliant 0
  • 1,000 $3.3100
  • 2,000 $3.2200
$3.2200 / $3.3100 Order Now
Future Electronics   RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Lead time: 10 Weeks Container: Reel 0
Reel
  • 1,000 $2.7500
$2.7500 Buy Now

Part Details for AS4C8M16SA-6TANTR

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AS4C8M16SA-6TANTR Part Data Attributes

AS4C8M16SA-6TANTR Alliance Memory Inc
Buy Now Datasheet
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AS4C8M16SA-6TANTR Alliance Memory Inc IC SDRAM 128MBIT 166MHZ 54TSOP
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ALLIANCE MEMORY INC
Package Description TSOP2, TSOP54,.46,32
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8542.32.00.02
Factory Lead Time 10 Weeks
Samacsys Manufacturer Alliance Memory
Access Mode FOUR BANK PAGE BURST
Access Time-Max 6.5 ns
Additional Feature AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 166 MHz
I/O Type COMMON
Interleaved Burst Length 1,2,4,8
JESD-30 Code R-PDSO-G54
JESD-609 Code e3
Length 22.22 mm
Memory Density 134217728 bit
Memory IC Type SYNCHRONOUS DRAM
Memory Width 16
Moisture Sensitivity Level 3
Number of Functions 1
Number of Ports 1
Number of Terminals 54
Number of Words 8388608 words
Number of Words Code 8000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 105 °C
Operating Temperature-Min -40 °C
Organization 8MX16
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code TSOP2
Package Equivalence Code TSOP54,.46,32
Package Shape RECTANGULAR
Package Style SMALL OUTLINE, THIN PROFILE
Refresh Cycles 4096
Screening Level AEC-Q100
Seated Height-Max 1.2 mm
Self Refresh YES
Sequential Burst Length 1,2,4,8,FP
Standby Current-Max 0.042 A
Standby Voltage-Min 3 V
Supply Current-Max 0.075 mA
Supply Voltage-Max (Vsup) 3.6 V
Supply Voltage-Min (Vsup) 3 V
Supply Voltage-Nom (Vsup) 3.3 V
Surface Mount YES
Technology CMOS
Temperature Grade INDUSTRIAL
Terminal Finish TIN
Terminal Form GULL WING
Terminal Pitch 0.8 mm
Terminal Position DUAL
Width 10.16 mm

Alternate Parts for AS4C8M16SA-6TANTR

This table gives cross-reference parts and alternative options found for AS4C8M16SA-6TANTR. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of AS4C8M16SA-6TANTR, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
K4S281632D-TL55 Synchronous DRAM, 8MX16, 5ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 Samsung Semiconductor AS4C8M16SA-6TANTR vs K4S281632D-TL55
HYB39S128160DT-6 Synchronous DRAM, 8MX16, 5ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-54 Infineon Technologies AG AS4C8M16SA-6TANTR vs HYB39S128160DT-6
W9812G6GH-6I Synchronous DRAM, 8MX16, 5ns, CMOS, PDSO54, 0.400 INCH, 0.80 INCH PITCH, ROHS COMPLIANT, TSOP2-54 Winbond Electronics Corp AS4C8M16SA-6TANTR vs W9812G6GH-6I
K4S281632D-TI55 Synchronous DRAM, 8MX16, 5ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 Samsung Semiconductor AS4C8M16SA-6TANTR vs K4S281632D-TI55
AS4C8M16S-6TANTR Synchronous DRAM, 8MX16, 5ns, CMOS, PDSO54, 0.400 INCH, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, TSOP2-54 Alliance Memory Inc AS4C8M16SA-6TANTR vs AS4C8M16S-6TANTR
W9812G6DH-6 Synchronous DRAM, 8MX16, 5ns, CMOS, PDSO54, 0.400 INCH, 0.80 MM PITCH, ROHS COMPLIANT, TSOP2-54 Winbond Electronics Corp AS4C8M16SA-6TANTR vs W9812G6DH-6
AS4C8M16SA-6TAN Synchronous DRAM, 8MX16, 6.5ns, CMOS, PDSO54, 0.400 INCH, HALOGEN AND LEAD FREE, PLASTIC, TSOP2-54 Alliance Memory Inc AS4C8M16SA-6TANTR vs AS4C8M16SA-6TAN
K4S281632I-TL600 Synchronous DRAM, 8MX16, 5ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 Samsung Semiconductor AS4C8M16SA-6TANTR vs K4S281632I-TL600
IS42SM16800E-5TLI Synchronous DRAM, 8MX16, 5ns, CMOS, PDSO54, LEAD FREE, PLASTIC, TSOP2-54 Integrated Silicon Solution Inc AS4C8M16SA-6TANTR vs IS42SM16800E-5TLI
AS4C8M16SA-6TINTR IC SDRAM 128MBIT 166MHZ 54TSOP Alliance Memory Inc AS4C8M16SA-6TANTR vs AS4C8M16SA-6TINTR
Part Number Description Manufacturer Compare
HM5212165FLTD-A60 Synchronous DRAM, 8MX16, 6ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 Hitachi Ltd AS4C8M16SA-6TANTR vs HM5212165FLTD-A60
KM44S32030T-G10 Synchronous DRAM, 32MX4, 7ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-54 Samsung Semiconductor AS4C8M16SA-6TANTR vs KM44S32030T-G10
IS42S16800E-7TL-TR Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, LEAD FREE, TSOP2-54 Integrated Silicon Solution Inc AS4C8M16SA-6TANTR vs IS42S16800E-7TL-TR
HYB39SC128169EE-7 Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, GREEN, PLASTIC, TSOP2-54 Qimonda AG AS4C8M16SA-6TANTR vs HYB39SC128169EE-7
MT48LC8M16A2TG-75IT:G Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 Micron Technology Inc AS4C8M16SA-6TANTR vs MT48LC8M16A2TG-75IT:G
HM5212165FLTD-A60 Synchronous DRAM, 8MX16, 6ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 Elpida Memory Inc AS4C8M16SA-6TANTR vs HM5212165FLTD-A60
HY57W2A1620HCT-S Synchronous DRAM, 8MX16, 7ns, CMOS, PDSO54, 0.400 INCH, TSOP2-54 SK Hynix Inc AS4C8M16SA-6TANTR vs HY57W2A1620HCT-S
GM72V28441ALT Synchronous DRAM, 32MX4, 6ns, CMOS, PDSO54, 0.400 INCH, TSOP-54 LG Semicon Co Ltd AS4C8M16SA-6TANTR vs GM72V28441ALT
V54C3128404VCLI10E Synchronous DRAM, 32MX4, 6ns, CMOS, PDSO54, 0.400 INCH, GREEN, PLASTIC, TSOP2-54 ProMOS Technologies Inc AS4C8M16SA-6TANTR vs V54C3128404VCLI10E
TC59SM704AFTL-80 IC 32M X 4 SYNCHRONOUS DRAM, 6 ns, PDSO54, 0.400 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-54, Dynamic RAM Toshiba America Electronic Components AS4C8M16SA-6TANTR vs TC59SM704AFTL-80

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