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Memory / DRAMs / AS4C8M16D1-5BCNTR
Datasheets
AS4C8M16D1-5BCNTR by: Alliance Memory Inc

IC SDRAM 128MBIT 200MHZ 60BGA

Part Details for AS4C8M16D1-5BCNTR by Alliance Memory Inc

Overview of AS4C8M16D1-5BCNTR by Alliance Memory Inc

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Applications Computing and Data Storage

Price & Stock for AS4C8M16D1-5BCNTR

Part # Distributor Description Stock Price Buy
DISTI # 85AK7146
Newark Ddr1, 128Mb, 8M X 16, 2.5V, Bga, 200Mhz, Commercial Temp, T&r |Alliance Memory AS4C8M16D1-5BCNTR RoHS: Not Compliant Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 1 $3.8000
  • 5,000 $3.7000
$3.7000 / $3.8000 Buy Now
DISTI # AS4C8M16D1-5BCNTR-ND
DigiKey IC DRAM 128MBIT PAR 60TFBGA Min Qty: 2500 Lead time: 20 Weeks Container: Tape & Reel (TR) Temporarily Out of Stock
  • 2,500 $2.9411
$2.9411 Buy Now
DISTI # AS4C8M16D1-5BCNTR
Avnet Americas DRAM Chip DDR1 SDRAM 128Mbit 8M X 16 60-Pin TFBGA T/R - Tape and Reel (Alt: AS4C8M16D1-5BCNTR) RoHS: Not Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 20 Weeks, 0 Days Container: Reel 0
RFQ
DISTI # 913-AS4C8M16D1-5BCNT
Mouser Electronics DRAM DDR1, 128Mb, 8M x 16, 2.5V, 60ball TFBGA, 200Mhz, Commercial Temp - Tape & Reel RoHS: Compliant 0
  • 2,500 $2.8500
$2.8500 Order Now
Future Electronics   RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Lead time: 20 Weeks Container: Reel 0
Reel
  • 2,500 $2.3800
$2.3800 Buy Now

Part Details for AS4C8M16D1-5BCNTR

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AS4C8M16D1-5BCNTR Part Data Attributes

Parametric Data
AS4C8M16D1-5BCNTR Alliance Memory Inc
Buy Now Datasheet
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AS4C8M16D1-5BCNTR Alliance Memory Inc IC SDRAM 128MBIT 200MHZ 60BGA
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ALLIANCE MEMORY INC
Package Description TBGA, BGA60,9X12,40/32
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8542.32.00.02
Factory Lead Time 20 Weeks
Access Mode FOUR BANK PAGE BURST
Access Time-Max 0.7 ns
Additional Feature AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 200 MHz
I/O Type COMMON
Interleaved Burst Length 2,4,8
JESD-30 Code R-PBGA-B60
Length 13 mm
Memory Density 134217728 bit
Memory IC Type DDR1 DRAM
Memory Width 16
Moisture Sensitivity Level 3
Number of Functions 1
Number of Ports 1
Number of Terminals 60
Number of Words 8388608 words
Number of Words Code 8000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 70 °C
Operating Temperature-Min
Organization 8MX16
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code TBGA
Package Equivalence Code BGA60,9X12,40/32
Package Shape RECTANGULAR
Package Style GRID ARRAY, THIN PROFILE
Refresh Cycles 4096
Seated Height-Max 1.2 mm
Self Refresh YES
Sequential Burst Length 2,4,8
Standby Current-Max 0.005 A
Standby Voltage-Min 2.3 V
Supply Current-Max 0.14 mA
Supply Voltage-Max (Vsup) 2.7 V
Supply Voltage-Min (Vsup) 2.3 V
Supply Voltage-Nom (Vsup) 2.5 V
Surface Mount YES
Technology CMOS
Temperature Grade COMMERCIAL
Terminal Form BALL
Terminal Pitch 1 mm
Terminal Position BOTTOM
Width 8 mm

Alternate Parts for AS4C8M16D1-5BCNTR

This table gives cross-reference parts and alternative options found for AS4C8M16D1-5BCNTR. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of AS4C8M16D1-5BCNTR, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
AS4C8M16D1-5BCN DDR DRAM, 8MX16, 0.7ns, CMOS, PBGA60, FBGA-60 Alliance Memory Inc AS4C8M16D1-5BCNTR vs AS4C8M16D1-5BCN
Part Number Description Manufacturer Compare
W9412G6JH-5I DDR DRAM, 8MX16, 0.7ns, CMOS, PDSO66, 0.400 INCH, ROHS COMPLIANT, TSOP2-66 Winbond Electronics Corp AS4C8M16D1-5BCNTR vs W9412G6JH-5I
NT5DS8M16IS-5TI DDR DRAM, 8MX16, 0.7ns, CMOS, PDSO66, TSOP2-66 Nanya Technology Corporation AS4C8M16D1-5BCNTR vs NT5DS8M16IS-5TI
NT5DS8M16IS-6KI DDR DRAM, 8MX16, 0.7ns, CMOS, PDSO66, TSOP2-66 Nanya Technology Corporation AS4C8M16D1-5BCNTR vs NT5DS8M16IS-6KI
M13S128168A-5BG2N DDR DRAM, 8MX16, 0.7ns, CMOS, PBGA60, 8 X 13 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, BGA-60 Elite Semiconductor Memory Technology Inc AS4C8M16D1-5BCNTR vs M13S128168A-5BG2N
W9412G6JH-6I DDR DRAM, 8MX16, 0.7ns, CMOS, PDSO66, 0.400 INCH, ROHS COMPLIANT, TSOP2-66 Winbond Electronics Corp AS4C8M16D1-5BCNTR vs W9412G6JH-6I
MT46V8M16P6TDTR DDR DRAM, 8MX16, 0.7ns, CMOS, PDSO66, 0.400 INCH, LEAD FREE, PLASTIC, TSOP-66 Micron Technology Inc AS4C8M16D1-5BCNTR vs MT46V8M16P6TDTR
KM416L8031BT-GY0 DDR DRAM, 8MX16, 0.75ns, CMOS, PDSO66, TSOP2-66 Samsung Semiconductor AS4C8M16D1-5BCNTR vs KM416L8031BT-GY0
KM416L8031BT-FZ0 DDR DRAM, 8MX16, 0.75ns, CMOS, PDSO66, TSOP2-66 Samsung Semiconductor AS4C8M16D1-5BCNTR vs KM416L8031BT-FZ0
M13S128168A-5TG2N DDR DRAM, 8MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, LEAD FREE, TSOP2-66 Elite Semiconductor Memory Technology Inc AS4C8M16D1-5BCNTR vs M13S128168A-5TG2N
W9412G6JH-6 DDR DRAM, 8MX16, 0.7ns, CMOS, PDSO66, 0.400 INCH, ROHS COMPLIANT, TSOP2-66 Winbond Electronics Corp AS4C8M16D1-5BCNTR vs W9412G6JH-6

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