Part Details for AS4C4M4E1Q-50TC by Alliance Semiconductor Corporation
Overview of AS4C4M4E1Q-50TC by Alliance Semiconductor Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Industrial Automation
Renewable Energy
Robotics and Drones
Part Details for AS4C4M4E1Q-50TC
AS4C4M4E1Q-50TC CAD Models
AS4C4M4E1Q-50TC Part Data Attributes:
|
AS4C4M4E1Q-50TC
Alliance Semiconductor Corporation
Buy Now
Datasheet
|
Compare Parts:
AS4C4M4E1Q-50TC
Alliance Semiconductor Corporation
EDO DRAM, 4MX4, 50ns, CMOS, PDSO28, 0.300 INCH, PLASTIC, TSOP-28
|
Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | ALLIANCE SEMICONDUCTOR CORP | |
Part Package Code | TSOP | |
Package Description | SOP, TSSOP28,.53,22 | |
Pin Count | 28 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8542.32.00.02 | |
Access Mode | FAST PAGE WITH EDO | |
Access Time-Max | 50 ns | |
Additional Feature | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | |
I/O Type | COMMON | |
JESD-30 Code | R-PDSO-G28 | |
JESD-609 Code | e0 | |
Memory Density | 16777216 bit | |
Memory IC Type | EDO DRAM | |
Memory Width | 4 | |
Number of Functions | 1 | |
Number of Ports | 1 | |
Number of Terminals | 28 | |
Number of Words | 4194304 words | |
Number of Words Code | 4000000 | |
Operating Mode | ASYNCHRONOUS | |
Operating Temperature-Max | 70 °C | |
Operating Temperature-Min | ||
Organization | 4MX4 | |
Output Characteristics | 3-STATE | |
Package Body Material | PLASTIC/EPOXY | |
Package Code | SOP | |
Package Equivalence Code | TSSOP28,.53,22 | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 240 | |
Qualification Status | Not Qualified | |
Refresh Cycles | 2048 | |
Self Refresh | NO | |
Standby Current-Max | 0.001 A | |
Supply Current-Max | 0.11 mA | |
Supply Voltage-Max (Vsup) | 5.5 V | |
Supply Voltage-Min (Vsup) | 4.5 V | |
Supply Voltage-Nom (Vsup) | 5 V | |
Surface Mount | YES | |
Technology | CMOS | |
Temperature Grade | COMMERCIAL | |
Terminal Finish | TIN LEAD | |
Terminal Form | GULL WING | |
Terminal Pitch | 0.55 mm | |
Terminal Position | DUAL |
Alternate Parts for AS4C4M4E1Q-50TC
This table gives cross-reference parts and alternative options found for AS4C4M4E1Q-50TC. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of AS4C4M4E1Q-50TC, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
KM44C4103CS-5 | Fast Page DRAM, 4MX4, 50ns, CMOS, PDSO28, 0.300 INCH, PLASTIC, TSOP2-28 | Samsung Semiconductor | AS4C4M4E1Q-50TC vs KM44C4103CS-5 |
KM44C4103CS-L6 | Fast Page DRAM, 4MX4, 60ns, CMOS, PDSO28, 0.300 INCH, PLASTIC, TSOP2-28 | Samsung Semiconductor | AS4C4M4E1Q-50TC vs KM44C4103CS-L6 |
KM44C4005CS-5 | EDO DRAM, 4MX4, 50ns, CMOS, PDSO28, 0.300 INCH, PLASTIC, TSOP2-28 | Samsung Semiconductor | AS4C4M4E1Q-50TC vs KM44C4005CS-5 |
K4Q170411C-FC50 | EDO DRAM, 4MX4, 50ns, CMOS, PDSO28, 0.300 INCH, PLASTIC, TSOP2-28 | Samsung Semiconductor | AS4C4M4E1Q-50TC vs K4Q170411C-FC50 |
TC5116400BFT-70 | IC 4M X 4 OTHER DRAM, 70 ns, PDSO28, TSOP2-28, Dynamic RAM | Toshiba America Electronic Components | AS4C4M4E1Q-50TC vs TC5116400BFT-70 |
K4Q160411C-FC50 | EDO DRAM, 4MX4, 50ns, CMOS, PDSO28, 0.300 INCH, PLASTIC, TSOP2-28 | Samsung Semiconductor | AS4C4M4E1Q-50TC vs K4Q160411C-FC50 |
K4P160411C-FL600 | Fast Page DRAM, 4MX4, 60ns, CMOS, PDSO28, 0.300 INCH, PLASTIC, TSOP2-28 | Samsung Semiconductor | AS4C4M4E1Q-50TC vs K4P160411C-FL600 |
K4Q170411C-FC600 | EDO DRAM, 4MX4, 60ns, CMOS, PDSO28, 0.300 INCH, PLASTIC, TSOP2-28 | Samsung Semiconductor | AS4C4M4E1Q-50TC vs K4Q170411C-FC600 |
K4Q160411C-FL50 | EDO DRAM, 4MX4, 50ns, CMOS, PDSO28, 0.300 INCH, PLASTIC, TSOP2-28 | Samsung Semiconductor | AS4C4M4E1Q-50TC vs K4Q160411C-FL50 |
TC5116400BTR-60 | IC 4M X 4 OTHER DRAM, 60 ns, PDSO28, REVERSE, TSOP2-28, Dynamic RAM | Toshiba America Electronic Components | AS4C4M4E1Q-50TC vs TC5116400BTR-60 |