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Memory / DRAMs / AS4C16M16SA-6TCN
Datasheets
AS4C16M16SA-6TCN by: Alliance Memory Inc

Synchronous DRAM, 16MX16, 5ns, CMOS, PDSO54, 0.400 INCH, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, TSOP2-54

Part Details for AS4C16M16SA-6TCN by Alliance Memory Inc

Overview of AS4C16M16SA-6TCN by Alliance Memory Inc

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Applications Consumer Electronics Computing and Data Storage

Price & Stock for AS4C16M16SA-6TCN

Part # Distributor Description Stock Price Buy
DISTI # 82AK3784
Newark Dram, 166Mhz, 256Mbit, Tsop-Ii-54, Dram Type:Sdram, Memory Configuration:16M X 16Bit, Clock Frequency Max:166Mhz, Ic Case/Package:Tsop-Ii, No. Of Pins:54Pins, Supply Voltage Nom:3.3V, Ic Mounting:Surface Mount, Product Range:- Rohs Compliant: Yes |Alliance Memory AS4C16M16SA-6TCN Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk 108
  • 1 $5.2600
  • 100 $4.3000
  • 250 $3.9400
  • 500 $3.6600
  • 1,000 $3.4400
$3.4400 / $5.2600 Buy Now
DISTI # 1450-1252-ND
DigiKey IC DRAM 256MBIT PAR 54TSOP II Min Qty: 1 Lead time: 8 Weeks Container: Tray 2165
In Stock
  • 1 $4.3300
  • 10 $3.9300
  • 25 $3.8448
  • 40 $3.8243
  • 108 $3.4288
  • 324 $3.4164
  • 540 $3.2915
  • 972 $3.1292
$3.1292 / $4.3300 Buy Now
DISTI # AS4C16M16SA-6TCN
Avnet Americas DRAM Synchronous 16M x 16 bit Synchronous - Trays (Alt: AS4C16M16SA-6TCN) RoHS: Compliant Min Qty: 108 Package Multiple: 108 Lead time: 8 Weeks, 0 Days Container: Tray 135031 Factory Stock
  • 108 $3.6000
$3.6000 Buy Now
DISTI # 913-4C16M16SA-6TCN
Mouser Electronics DRAM SDRAM, 256Mb, 16M x 16, 3.3V, 54pin TSOP II, 166 Mhz, Commercial Temp - Tray RoHS: Compliant 459
  • 1 $4.3000
  • 10 $3.8300
  • 108 $3.3500
  • 540 $3.0900
  • 2,592 $3.0400
$3.0400 / $4.3000 Buy Now
Future Electronics AS4C4M16SA Series 256 Mb (16 M x 16) 167 MHz CMOS Synchronous DRAM -TSOP II-54 RoHS: Compliant pbFree: Yes Min Qty: 108 Package Multiple: 108 Lead time: 8 Weeks Container: Tray 121
Tray
  • 108 $3.1600
  • 216 $3.1000
  • 324 $3.0300
$3.0300 / $3.1600 Buy Now
DISTI # AS4C16M16SA-6TCN
TME IC: DRAM memory, 256MbDRAM, 16Mx16bit, 3.3V, 166MHz, 5.4ns, 0÷70°C Min Qty: 1 201
  • 1 $4.9700
  • 5 $4.6500
  • 25 $4.1400
  • 108 $3.3400
$3.3400 / $4.9700 Buy Now
Karl Kruse GmbH & Co KG SDR 256Mb 16M x 16 3.3V 54pin TSOP II 166 Mhz Commercial Temp 146155
RFQ
DISTI # AS4C16M16SA-6TCN
Avnet Asia DRAM Synchronous 16M x 16 bit Synchronous (Alt: AS4C16M16SA-6TCN) RoHS: Compliant Min Qty: 1080 Package Multiple: 1080 Lead time: 8 Weeks, 0 Days 0
  • 1,080 $2.3630
  • 2,160 $2.0672
$2.0672 / $2.3630 Buy Now
DISTI # AS4C16M16SA-6TCN
Avnet Silica DRAM Synchronous 16M x 16 bit Synchronous (Alt: AS4C16M16SA-6TCN) RoHS: Compliant Min Qty: 108 Package Multiple: 108 Lead time: 9 Weeks, 0 Days Silica - 648
Buy Now
New Advantage Corporation SDRAM 256M-A die, 16M x 16, 3.3V, 166Mhz, Commercial (0 ~ 70�C), 54pin TSOP II RoHS: Compliant Min Qty: 1 Package Multiple: 108 216
  • 108 $3.6700
  • 216 $3.4300
$3.4300 / $3.6700 Buy Now

Part Details for AS4C16M16SA-6TCN

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AS4C16M16SA-6TCN Part Data Attributes

Parametric Data
AS4C16M16SA-6TCN Alliance Memory Inc
Buy Now Datasheet
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AS4C16M16SA-6TCN Alliance Memory Inc Synchronous DRAM, 16MX16, 5ns, CMOS, PDSO54, 0.400 INCH, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, TSOP2-54
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ALLIANCE MEMORY INC
Package Description TSOP2-54
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8542.32.00.24
Factory Lead Time 8 Weeks
Samacsys Manufacturer Alliance Memory
Access Mode FOUR BANK PAGE BURST
Access Time-Max 5 ns
Additional Feature AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 166 MHz
I/O Type COMMON
Interleaved Burst Length 1,2,4,8
JESD-30 Code R-PDSO-G54
JESD-609 Code e3
Length 22.22 mm
Memory Density 268435456 bit
Memory IC Type SYNCHRONOUS DRAM
Memory Width 16
Moisture Sensitivity Level 3
Number of Functions 1
Number of Ports 1
Number of Terminals 54
Number of Words 16777216 words
Number of Words Code 16000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 70 °C
Operating Temperature-Min
Organization 16MX16
Package Body Material PLASTIC/EPOXY
Package Code TSOP2
Package Equivalence Code TSOP54,.46,32
Package Shape RECTANGULAR
Package Style SMALL OUTLINE, THIN PROFILE
Peak Reflow Temperature (Cel) 260
Refresh Cycles 8192
Seated Height-Max 1.2 mm
Self Refresh YES
Sequential Burst Length 1,2,4,8,FP
Standby Current-Max 0.025 A
Supply Current-Max 0.06 mA
Supply Voltage-Max (Vsup) 3.6 V
Supply Voltage-Min (Vsup) 3 V
Supply Voltage-Nom (Vsup) 3.3 V
Surface Mount YES
Technology CMOS
Temperature Grade COMMERCIAL
Terminal Finish TIN
Terminal Form GULL WING
Terminal Pitch 0.8 mm
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 40
Width 10.16 mm

Alternate Parts for AS4C16M16SA-6TCN

This table gives cross-reference parts and alternative options found for AS4C16M16SA-6TCN. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of AS4C16M16SA-6TCN, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IS42S16160C-6TLI Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, 0.80 MM PITCH, LEAD FREE, TSOP2-54 Integrated Silicon Solution Inc AS4C16M16SA-6TCN vs IS42S16160C-6TLI
HY57V561620BST-6 Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 SK Hynix Inc AS4C16M16SA-6TCN vs HY57V561620BST-6
IS42S16160C-75TLI Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, 0.80 MM PITCH, LEAD FREE, TSOP2-54 Integrated Silicon Solution Inc AS4C16M16SA-6TCN vs IS42S16160C-75TLI
H57V2562GTR-75I Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, ROHS COMPLIANT, TSOP2-54 SK Hynix Inc AS4C16M16SA-6TCN vs H57V2562GTR-75I
K4S561632B-TC750 Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 Samsung Semiconductor AS4C16M16SA-6TCN vs K4S561632B-TC750
V54C3256164VHLI7PC Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, GREEN, PLASTIC, TSOP2-54 ProMOS Technologies Inc AS4C16M16SA-6TCN vs V54C3256164VHLI7PC
K4S561632C-TN7C Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 Samsung Semiconductor AS4C16M16SA-6TCN vs K4S561632C-TN7C
M12L2561616A-6TVG2A Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, LEAD FREE, TSOP2-54 Elite Semiconductor Memory Technology Inc AS4C16M16SA-6TCN vs M12L2561616A-6TVG2A
MT48LC16M16A1TG-75 Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP-54 Micron Technology Inc AS4C16M16SA-6TCN vs MT48LC16M16A1TG-75
AS4C16M16S-6TINTR Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, TSOP2-54 Alliance Memory Inc AS4C16M16SA-6TCN vs AS4C16M16S-6TINTR
Part Number Description Manufacturer Compare
V54C3256164VDUE7I Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, ROHS COMPLIANT, PLASTIC, TSOP2-54 ProMOS Technologies Inc AS4C16M16SA-6TCN vs V54C3256164VDUE7I
M12L2561616A-6TG Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, LEAD FREE, TSOP2-54 Elite Semiconductor Memory Technology Inc AS4C16M16SA-6TCN vs M12L2561616A-6TG
M12L2561616A-7TVG2A Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, LEAD FREE, TSOP2-54 Elite Semiconductor Memory Technology Inc AS4C16M16SA-6TCN vs M12L2561616A-7TVG2A
HYB39L256160AT-7.5 Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 10.16 X 22.22 MM, 0.80 MM PITCH, PLASTIC, TSOP2-54 Infineon Technologies AG AS4C16M16SA-6TCN vs HYB39L256160AT-7.5
W982516CH-7 Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, 0.80 MM PITCH, TSOP2-54 Winbond Electronics Corp AS4C16M16SA-6TCN vs W982516CH-7
MT48LC16M16A2TG-75:D Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 Micron Technology Inc AS4C16M16SA-6TCN vs MT48LC16M16A2TG-75:D
MT48LC16M16A2TG-7EL Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 Micron Technology Inc AS4C16M16SA-6TCN vs MT48LC16M16A2TG-7EL
HY57V561620LT-HI Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 SK Hynix Inc AS4C16M16SA-6TCN vs HY57V561620LT-HI
H57V2562GTR-60I Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, ROHS COMPLIANT, TSOP2-54 SK Hynix Inc AS4C16M16SA-6TCN vs H57V2562GTR-60I
IS42SM16160D-6TL Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, LEAD FREE, PLASTIC, TSOP2-54 Integrated Silicon Solution Inc AS4C16M16SA-6TCN vs IS42SM16160D-6TL

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