Datasheets
AS4C128M8D2-25BCNTR by: Alliance Memory Inc

DDR DRAM, 128MX8, 0.4ns, CMOS, PBGA60,

Part Details for AS4C128M8D2-25BCNTR by Alliance Memory Inc

Overview of AS4C128M8D2-25BCNTR by Alliance Memory Inc

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Applications Industrial Automation Renewable Energy Robotics and Drones

Price & Stock for AS4C128M8D2-25BCNTR

Part # Distributor Description Stock Price Buy
DISTI # AS4C128M8D2-25BCNTR
Avnet Silica DRAM Chip DDR2 SDRAM 1Gbit 128M X 8 1.8V 60-Pin FBGA T/R (Alt: AS4C128M8D2-25BCNTR) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 9 Weeks, 0 Days Silica - 0
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Part Details for AS4C128M8D2-25BCNTR

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AS4C128M8D2-25BCNTR Part Data Attributes:

AS4C128M8D2-25BCNTR Alliance Memory Inc
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AS4C128M8D2-25BCNTR Alliance Memory Inc DDR DRAM, 128MX8, 0.4ns, CMOS, PBGA60,
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer ALLIANCE MEMORY INC
Package Description FBGA, BGA60,9X11,32
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8542.32.00.32
Samacsys Manufacturer Alliance Memory
Access Time-Max 0.4 ns
Clock Frequency-Max (fCLK) 400 MHz
I/O Type COMMON
Interleaved Burst Length 4,8
JESD-30 Code R-PBGA-B60
Memory Density 1073741824 bit
Memory IC Type DDR2 DRAM
Memory Width 8
Moisture Sensitivity Level 3
Number of Terminals 60
Number of Words 134217728 words
Number of Words Code 128000000
Organization 128MX8
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code FBGA
Package Equivalence Code BGA60,9X11,32
Package Shape RECTANGULAR
Package Style GRID ARRAY, FINE PITCH
Qualification Status Not Qualified
Refresh Cycles 8192
Sequential Burst Length 4,8
Supply Current-Max 0.25 mA
Supply Voltage-Nom (Vsup) 1.8 V
Surface Mount YES
Technology CMOS
Terminal Form BALL
Terminal Pitch 0.8 mm
Terminal Position BOTTOM

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