Part Details for ARRAYRDM-0112A20-QFN-TR-E by onsemi
Results Overview of ARRAYRDM-0112A20-QFN-TR-E by onsemi
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Environmental Monitoring
Internet of Things (IoT)
Smart Cities
Agriculture Technology
ARRAYRDM-0112A20-QFN-TR-E Information
ARRAYRDM-0112A20-QFN-TR-E by onsemi is a Photo Diode.
Photo Diodes are under the broader part category of Optoelectronics.
Optoelectronic components work to detect, generate, and control light. They can essentially produce and/or react to light. Read more about Optoelectronics on our Optoelectronics part category page.
Price & Stock for ARRAYRDM-0112A20-QFN-TR-E
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DISTI #
ARRAYRDM-0112A20-QFN-TR-E
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Avnet Silica | Monolithic Array AnalogOUT 28Pin QFN TR (Alt: ARRAYRDM-0112A20-QFN-TR-E) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 9 Weeks, 0 Days | Silica - 0 |
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Buy Now | |
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DISTI #
ARRAYRDM-0112A20-QFN-TR-E
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EBV Elektronik | Monolithic Array AnalogOUT 28Pin QFN TR (Alt: ARRAYRDM-0112A20-QFN-TR-E) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 9 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for ARRAYRDM-0112A20-QFN-TR-E
ARRAYRDM-0112A20-QFN-TR-E CAD Models
ARRAYRDM-0112A20-QFN-TR-E Part Data Attributes
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ARRAYRDM-0112A20-QFN-TR-E
onsemi
Buy Now
Datasheet
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Compare Parts:
ARRAYRDM-0112A20-QFN-TR-E
onsemi
NIR-enhanced for LiDAR Applications, Automotive Qualified 1x12 SiPM Array, Pre-production - Not Automotive Qualified
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| Pbfree Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ON SEMICONDUCTOR | |
| Manufacturer Package Code | 485FZ | |
| Reach Compliance Code | compliant | |
| Date Of Intro | 2020-09-02 | |
| Optoelectronic Device Type | AVALANCHE PHOTODIODE |
ARRAYRDM-0112A20-QFN-TR-E Frequently Asked Questions (FAQ)
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The recommended PCB layout for optimal thermal performance involves using a thermal pad on the bottom of the QFN package, connecting it to a large copper area on the PCB, and using thermal vias to dissipate heat to the other side of the board. A 4-layer PCB with a dedicated thermal layer is also recommended.
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To ensure reliable operation at high temperatures, it's essential to follow the recommended operating conditions, including the maximum junction temperature (Tj) of 150°C. Additionally, ensure proper thermal design, use a heat sink if necessary, and consider derating the device's power dissipation at higher temperatures.
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The recommended soldering profile for the ARRAYRDM-0112A20-QFN-TR-E involves a peak temperature of 260°C, with a dwell time of 20-30 seconds above 220°C. A reflow soldering process is recommended, and the device should be handled in accordance with the JEDEC J-STD-020 standard.
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To troubleshoot issues with the device's radiation hardness, first verify that the device is operated within the recommended total ionizing dose (TID) and single event effect (SEE) limits. Then, check for any signs of radiation-induced degradation, such as changes in the device's electrical characteristics. If issues persist, consult onsemi's radiation hardness testing and characterization reports for guidance.
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The recommended ESD protection measures for the ARRAYRDM-0112A20-QFN-TR-E include using ESD-sensitive handling and storage procedures, implementing ESD protection circuits on the PCB, and ensuring that the device is powered down during handling and storage. Additionally, consider using ESD protection devices, such as TVS diodes, on the PCB.