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Transistors RF Power Field-Effect Transistors ARF463BP1G

ARF463BP1G
Description: RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-247AD, ROHS COMPLIANT, TO-247, 3 PIN

Overview of ARF463BP1G by Advanced Power Technology

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  • Distributor Offerings: ( 0 listings )
  • Number of FFF Equivalents: ( 0 replacements )
  • CAD Models: ( Request Part )
  • Number of Functional Equivalents: ( 0 options )
  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )
Where used in Applications: Consumer Electronics Security and Surveillance Internet of Things (IoT) Audio and Video Systems Computing and Data Storage Financial Technology (Fintech) Smart Cities Telecommunications Communication and Networking Automotive

CAD Models for ARF463BP1G by Advanced Power Technology
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Part Data Attributes for ARF463BP1G by Advanced Power Technology
Parametric Data

ARF463BP1G
Advanced Power Technology
Buy Now
-
-
Part Life Cycle Code
Transferred
Ihs Manufacturer
ADVANCED POWER TECHNOLOGY INC
Package Description
ROHS COMPLIANT, TO-247, 3 PIN
Reach Compliance Code
unknown
ECCN Code
EAR99
Case Connection
SOURCE
Configuration
SINGLE
DS Breakdown Voltage-Min
500 V
Drain Current-Max (ID)
9 A
FET Technology
METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band
VERY HIGH FREQUENCY BAND
JEDEC-95 Code
TO-247AD
JESD-30 Code
R-PSFM-T3
Number of Elements
1
Number of Terminals
3
Operating Mode
ENHANCEMENT MODE
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
Qualification Status
Not Qualified
Surface Mount
NO
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Transistor Application
AMPLIFIER
Transistor Element Material
SILICON
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  1. ARF463BP1G
    Advanced Power Technology
    RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-247AD, ROHS COMPLIANT, TO-247, 3 PIN
    VS

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