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ARF449BG by:

RF Power Field-Effect Transistor

Part Details for ARF449BG by Microsemi Corporation

Overview of ARF449BG by Microsemi Corporation

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Applications Education and Research Consumer Electronics Internet of Things (IoT) Audio and Video Systems Computing and Data Storage Aerospace and Defense Healthcare Telecommunications Automotive

Part Details for ARF449BG

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ARF449BG Part Data Attributes

ARF449BG Microsemi Corporation
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ARF449BG Microsemi Corporation RF Power Field-Effect Transistor
Pbfree Code No
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer MICROSEMI CORP
Reach Compliance Code compliant
ECCN Code EAR99
Case Connection SOURCE
Configuration SINGLE
DS Breakdown Voltage-Min 450 V
Drain Current-Max (ID) 9 A
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 40 pF
Highest Frequency Band VERY HIGH FREQUENCY BAND
JEDEC-95 Code TO-247
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Gain-Min (Gp) 12 dB
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application AMPLIFIER
Transistor Element Material SILICON
Turn-off Time-Max (toff) 32 ns
Turn-on Time-Max (ton) 17 ns

Alternate Parts for ARF449BG

This table gives cross-reference parts and alternative options found for ARF449BG. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of ARF449BG, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
ARF449B RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN Microsemi Corporation ARF449BG vs ARF449B
Part Number Description Manufacturer Compare
ARF449B RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN Microsemi Corporation ARF449BG vs ARF449B

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