Part Details for APTMC120AM55CT1AG by Microsemi Corporation
Overview of APTMC120AM55CT1AG by Microsemi Corporation
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Part Details for APTMC120AM55CT1AG
APTMC120AM55CT1AG CAD Models
APTMC120AM55CT1AG Part Data Attributes
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APTMC120AM55CT1AG
Microsemi Corporation
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Datasheet
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APTMC120AM55CT1AG
Microsemi Corporation
Power Field-Effect Transistor, 1-Element, Metal-oxide Semiconductor FET
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Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | MICROSEMI CORP | |
Package Description | MODULE-12 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Microsemi Corporation | |
Case Connection | ISOLATED | |
Configuration | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR | |
DS Breakdown Voltage-Min | 1200 V | |
Drain Current-Max (ID) | 55 A | |
Drain-source On Resistance-Max | 0.049 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-XUFM-X12 | |
Number of Elements | 2 | |
Number of Terminals | 12 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 125 °C | |
Operating Temperature-Min | -40 °C | |
Package Body Material | UNSPECIFIED | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 250 W | |
Pulsed Drain Current-Max (IDM) | 110 A | |
Surface Mount | NO | |
Terminal Form | UNSPECIFIED | |
Terminal Position | UPPER | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON CARBIDE |