Part Details for APTM50UM09FAG by Microsemi Corporation
Overview of APTM50UM09FAG by Microsemi Corporation
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Part Details for APTM50UM09FAG
APTM50UM09FAG CAD Models
APTM50UM09FAG Part Data Attributes
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APTM50UM09FAG
Microsemi Corporation
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Datasheet
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APTM50UM09FAG
Microsemi Corporation
Power Field-Effect Transistor, 497A I(D), 500V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SP6 PACKAGE, 2 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | MICROSEMI CORP | |
| Package Description | SP6 PACKAGE, 2 PIN | |
| Pin Count | 2 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 3000 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 500 V | |
| Drain Current-Max (ID) | 497 A | |
| Drain-source On Resistance-Max | 0.01 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PUFM-X2 | |
| JESD-609 Code | e1 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 5000 W | |
| Pulsed Drain Current-Max (IDM) | 1988 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN SILVER COPPER | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Transistor Element Material | SILICON |