Datasheets
APTM20DHM20T by:

Power Field-Effect Transistor, 89A I(D), 200V, 0.02ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MODULE-14

Part Details for APTM20DHM20T by Advanced Power Technology

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Part Details for APTM20DHM20T

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APTM20DHM20T Part Data Attributes

APTM20DHM20T Advanced Power Technology
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APTM20DHM20T Advanced Power Technology Power Field-Effect Transistor, 89A I(D), 200V, 0.02ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MODULE-14
Part Life Cycle Code Transferred
Ihs Manufacturer ADVANCED POWER TECHNOLOGY INC
Package Description FLANGE MOUNT, R-XUFM-X14
Reach Compliance Code unknown
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 2500 mJ
Case Connection ISOLATED
Configuration PARALLEL, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
DS Breakdown Voltage-Min 200 V
Drain Current-Max (ID) 89 A
Drain-source On Resistance-Max 0.02 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-XUFM-X14
Number of Elements 2
Number of Terminals 14
Operating Mode ENHANCEMENT MODE
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 356 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Transistor Application SWITCHING
Transistor Element Material SILICON

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