Datasheets
APTM120H57FT3 by:

Power Field-Effect Transistor, 17A I(D), 1200V, 0.57ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MODULE-25

Part Details for APTM120H57FT3 by Advanced Power Technology

Overview of APTM120H57FT3 by Advanced Power Technology

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Part Details for APTM120H57FT3

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APTM120H57FT3 Part Data Attributes

APTM120H57FT3 Advanced Power Technology
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APTM120H57FT3 Advanced Power Technology Power Field-Effect Transistor, 17A I(D), 1200V, 0.57ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MODULE-25
Part Life Cycle Code Transferred
Ihs Manufacturer ADVANCED POWER TECHNOLOGY INC
Package Description FLANGE MOUNT, R-XUFM-X25
Reach Compliance Code unknown
ECCN Code EAR99
Category CO2 Kg 8.8
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 3000 mJ
Case Connection ISOLATED
Configuration COMPLEX
DS Breakdown Voltage-Min 1200 V
Drain Current-Max (ID) 17 A
Drain-source On Resistance-Max 0.57 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-XUFM-X25
Number of Elements 4
Number of Terminals 25
Operating Mode ENHANCEMENT MODE
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 68 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Transistor Application SWITCHING
Transistor Element Material SILICON

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