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APTGLQ50H65T3G by:

Insulated Gate Bipolar Transistor

Part Details for APTGLQ50H65T3G by Microsemi Corporation

Overview of APTGLQ50H65T3G by Microsemi Corporation

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Applications Industrial Automation Electronic Manufacturing

Part Details for APTGLQ50H65T3G

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APTGLQ50H65T3G Part Data Attributes

APTGLQ50H65T3G Microsemi Corporation
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APTGLQ50H65T3G Microsemi Corporation Insulated Gate Bipolar Transistor
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer MICROSEMI CORP
Package Description MODULE-25
Reach Compliance Code compliant
ECCN Code EAR99
Case Connection ISOLATED
Collector Current-Max (IC) 70 A
Collector-Emitter Voltage-Max 650 V
Configuration COMPLEX
Gate-Emitter Thr Voltage-Max 5.6 V
Gate-Emitter Voltage-Max 20 V
JESD-30 Code R-XUFM-X25
Number of Elements 4
Number of Terminals 25
Operating Temperature-Max 150 °C
Operating Temperature-Min -40 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 175 W
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Transistor Application MOTOR CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 249 ns
Turn-on Time-Nom (ton) 48 ns
VCEsat-Max 2.3 V

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