Part Details for APTGLQ50H65T3G by Microsemi Corporation
Overview of APTGLQ50H65T3G by Microsemi Corporation
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Applications
Industrial Automation
Electronic Manufacturing
Part Details for APTGLQ50H65T3G
APTGLQ50H65T3G CAD Models
APTGLQ50H65T3G Part Data Attributes
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APTGLQ50H65T3G
Microsemi Corporation
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Datasheet
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APTGLQ50H65T3G
Microsemi Corporation
Insulated Gate Bipolar Transistor
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Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | MICROSEMI CORP | |
Package Description | MODULE-25 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Case Connection | ISOLATED | |
Collector Current-Max (IC) | 70 A | |
Collector-Emitter Voltage-Max | 650 V | |
Configuration | COMPLEX | |
Gate-Emitter Thr Voltage-Max | 5.6 V | |
Gate-Emitter Voltage-Max | 20 V | |
JESD-30 Code | R-XUFM-X25 | |
Number of Elements | 4 | |
Number of Terminals | 25 | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -40 °C | |
Package Body Material | UNSPECIFIED | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 175 W | |
Surface Mount | NO | |
Terminal Form | UNSPECIFIED | |
Terminal Position | UPPER | |
Transistor Application | MOTOR CONTROL | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 249 ns | |
Turn-on Time-Nom (ton) | 48 ns | |
VCEsat-Max | 2.3 V |