Part Details for APTGLQ200H120G by Microsemi Corporation
Overview of APTGLQ200H120G by Microsemi Corporation
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Part Details for APTGLQ200H120G
APTGLQ200H120G CAD Models
APTGLQ200H120G Part Data Attributes
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APTGLQ200H120G
Microsemi Corporation
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Datasheet
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APTGLQ200H120G
Microsemi Corporation
Insulated Gate Bipolar Transistor, 350A I(C), 1200V V(BR)CES
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| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | MICROSEMI CORP | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Microsemi Corporation | |
| Collector Current-Max (IC) | 350 A | |
| Collector-Emitter Voltage-Max | 1200 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| Number of Elements | 1 | |
| Operating Temperature-Max | 175 °C | |
| Power Dissipation-Max (Abs) | 1000 W | |
| VCEsat-Max | 2.4 V |