Part Details for APTC80H29T3G by Microchip Technology Inc
Results Overview of APTC80H29T3G by Microchip Technology Inc
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (1 replacement)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
APTC80H29T3G Information
APTC80H29T3G by Microchip Technology Inc is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for APTC80H29T3G
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
78AH5131
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Newark | Pm-Mosfet-Coolmos-Sp3 Sp3F Tube Rohs Compliant: Yes |Microchip APTC80H29T3G RoHS: Compliant Min Qty: 14 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$39.4600 / $62.7800 | Buy Now |
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DISTI #
APTC80H29T3G-ND
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DigiKey | MOSFET 4N-CH 800V 15A SP3 Min Qty: 14 Lead time: 27 Weeks Container: Bulk | Temporarily Out of Stock |
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$62.7800 | Buy Now |
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DISTI #
494-APTC80H29T3G
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Mouser Electronics | MOSFET Modules PM-MOSFET-COOLMOS-SP3 RoHS: Compliant | 0 |
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$62.7800 | Order Now |
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DISTI #
APTC80H29T3G
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TME | Module, transistor/transistor, 800V, 11A, SP3, Press-in PCB, 156W Min Qty: 1 | 0 |
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$60.5100 / $76.0900 | RFQ |
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NAC | DOR CC3038 RoHS: Compliant Min Qty: 2 Package Multiple: 1 Container: Tube | 0 |
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RFQ |
Part Details for APTC80H29T3G
APTC80H29T3G CAD Models
APTC80H29T3G Part Data Attributes
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APTC80H29T3G
Microchip Technology Inc
Buy Now
Datasheet
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Compare Parts:
APTC80H29T3G
Microchip Technology Inc
Power Field-Effect Transistor, 15A I(D), 800V, 0.29ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Select a part to compare: |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | MICROCHIP TECHNOLOGY INC | |
| Package Description | ROHS COMPLIANT, SP3, 25 PIN | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 27 Weeks | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 670 mJ | |
| Case Connection | ISOLATED | |
| Configuration | COMPLEX | |
| DS Breakdown Voltage-Min | 800 V | |
| Drain Current-Max (ID) | 15 A | |
| Drain-source On Resistance-Max | 0.29 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-XUFM-X25 | |
| JESD-609 Code | e1 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 4 | |
| Number of Terminals | 25 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 156 W | |
| Pulsed Drain Current-Max (IDM) | 60 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN SILVER COPPER | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for APTC80H29T3G
This table gives cross-reference parts and alternative options found for APTC80H29T3G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of APTC80H29T3G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| APTC80H29T3G | Microsemi Corporation | Check for Price | Power Field-Effect Transistor, 15A I(D), 800V, 0.29ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SP3, 25 PIN | APTC80H29T3G vs APTC80H29T3G |
APTC80H29T3G Frequently Asked Questions (FAQ)
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Microchip recommends a thermal pad on the bottom of the package, connected to a large copper area on the PCB to dissipate heat. A minimum of 2oz copper thickness is recommended, and the thermal pad should be connected to a ground plane to reduce thermal resistance.
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To ensure reliable operation at high temperatures, it's essential to follow the recommended operating conditions, including junction temperature (Tj) and ambient temperature (Ta). Also, ensure proper thermal design, including a heat sink if necessary, and consider derating the device's power dissipation at high temperatures.
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The maximum allowed voltage on the input pins is the voltage rating of the device, which is 80V for the APTC80H29T3G. However, it's recommended to keep the input voltage within the specified operating range to ensure reliable operation and prevent damage to the device.
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To protect the device from overvoltage and overcurrent conditions, consider using external protection components such as TVS diodes, zener diodes, or fuses. Additionally, ensure that the device is operated within its specified ratings and follow proper PCB design practices to minimize the risk of damage.
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The recommended gate drive voltage for optimal switching performance is typically between 10V to 15V, depending on the specific application and switching frequency. However, it's essential to consult the datasheet and application notes for specific guidance on gate drive voltage and switching performance.