Part Details for APTC60HM45T1G by Microsemi Corporation
Overview of APTC60HM45T1G by Microsemi Corporation
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Applications
Industrial Automation
Electronic Manufacturing
Part Details for APTC60HM45T1G
APTC60HM45T1G CAD Models
APTC60HM45T1G Part Data Attributes
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APTC60HM45T1G
Microsemi Corporation
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Datasheet
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APTC60HM45T1G
Microsemi Corporation
Power Field-Effect Transistor, 49A I(D), 600V, 0.045ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SP1, 12 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | MICROSEMI CORP | |
| Package Description | ROHS COMPLIANT, SP1, 12 PIN | |
| Pin Count | 12 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 1900 mJ | |
| Configuration | BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 49 A | |
| Drain-source On Resistance-Max | 0.045 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-XUFM-T12 | |
| JESD-609 Code | e1 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 4 | |
| Number of Terminals | 12 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 250 W | |
| Pulsed Drain Current-Max (IDM) | 130 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN SILVER COPPER | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | UPPER | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |