Datasheets
APT94N60L2C3E3 by: Microsemi Corporation

Power Field-Effect Transistor, 94A I(D), 600V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264MAX, 3 PIN

Part Details for APT94N60L2C3E3 by Microsemi Corporation

Overview of APT94N60L2C3E3 by Microsemi Corporation

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Applications Industrial Automation Electronic Manufacturing

Part Details for APT94N60L2C3E3

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APT94N60L2C3E3 Part Data Attributes

APT94N60L2C3E3 Microsemi Corporation
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APT94N60L2C3E3 Microsemi Corporation Power Field-Effect Transistor, 94A I(D), 600V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264MAX, 3 PIN
Part Life Cycle Code Transferred
Ihs Manufacturer MICROSEMI CORP
Package Description FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code compliant
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 1800 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 94 A
Drain-source On Resistance-Max 0.035 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-264AA
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 282 A
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for APT94N60L2C3E3

This table gives cross-reference parts and alternative options found for APT94N60L2C3E3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of APT94N60L2C3E3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
APT97N65LC6 Power Field-Effect Transistor, 97A I(D), 650V, 0.041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN Microsemi Corporation APT94N60L2C3E3 vs APT97N65LC6
APT97N65B2C6 Power Field-Effect Transistor, 97A I(D), 650V, 0.041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN Microsemi Corporation APT94N60L2C3E3 vs APT97N65B2C6
IPW60R017C7 Power Field-Effect Transistor, 109A I(D), 600V, 0.017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, Infineon Technologies AG APT94N60L2C3E3 vs IPW60R017C7
APT106N60B2C6 Power Field-Effect Transistor, 106A I(D), 600V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Microchip Technology Inc APT94N60L2C3E3 vs APT106N60B2C6
APT94N65B2C3 Power Field-Effect Transistor, 94A I(D), 650V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TMAX-3 Microsemi Corporation APT94N60L2C3E3 vs APT94N65B2C3

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