Part Details for APT94N60L2C3E3 by Microsemi Corporation
Overview of APT94N60L2C3E3 by Microsemi Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (5 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for APT94N60L2C3E3
APT94N60L2C3E3 CAD Models
APT94N60L2C3E3 Part Data Attributes
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APT94N60L2C3E3
Microsemi Corporation
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Datasheet
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APT94N60L2C3E3
Microsemi Corporation
Power Field-Effect Transistor, 94A I(D), 600V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264MAX, 3 PIN
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Part Life Cycle Code | Transferred | |
Ihs Manufacturer | MICROSEMI CORP | |
Package Description | FLANGE MOUNT, R-PSFM-T3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 1800 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 600 V | |
Drain Current-Max (ID) | 94 A | |
Drain-source On Resistance-Max | 0.035 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-264AA | |
JESD-30 Code | R-PSFM-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 282 A | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for APT94N60L2C3E3
This table gives cross-reference parts and alternative options found for APT94N60L2C3E3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of APT94N60L2C3E3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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APT97N65LC6 | Power Field-Effect Transistor, 97A I(D), 650V, 0.041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN | Microsemi Corporation | APT94N60L2C3E3 vs APT97N65LC6 |
APT97N65B2C6 | Power Field-Effect Transistor, 97A I(D), 650V, 0.041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN | Microsemi Corporation | APT94N60L2C3E3 vs APT97N65B2C6 |
IPW60R017C7 | Power Field-Effect Transistor, 109A I(D), 600V, 0.017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, | Infineon Technologies AG | APT94N60L2C3E3 vs IPW60R017C7 |
APT106N60B2C6 | Power Field-Effect Transistor, 106A I(D), 600V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Microchip Technology Inc | APT94N60L2C3E3 vs APT106N60B2C6 |
APT94N65B2C3 | Power Field-Effect Transistor, 94A I(D), 650V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TMAX-3 | Microsemi Corporation | APT94N60L2C3E3 vs APT94N65B2C3 |