Datasheets
APT90GF100JN by:

Insulated Gate Bipolar Transistor, 90A I(C), 1000V V(BR)CES, N-Channel, ISOTOP-4

Part Details for APT90GF100JN by Advanced Power Technology

Overview of APT90GF100JN by Advanced Power Technology

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Part Details for APT90GF100JN

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APT90GF100JN Part Data Attributes

APT90GF100JN Advanced Power Technology
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APT90GF100JN Advanced Power Technology Insulated Gate Bipolar Transistor, 90A I(C), 1000V V(BR)CES, N-Channel, ISOTOP-4
Part Life Cycle Code Obsolete
Ihs Manufacturer ADVANCED POWER TECHNOLOGY INC
Package Description FLANGE MOUNT, R-PUFM-X4
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.29.00.95
Additional Feature FAST SWITCHING
Case Connection ISOLATED
Collector Current-Max (IC) 90 A
Collector-Emitter Voltage-Max 1000 V
Configuration SINGLE
Fall Time-Max (tf) 700 ns
Gate-Emitter Thr Voltage-Max 6 V
Gate-Emitter Voltage-Max 20 V
JESD-30 Code R-PUFM-X4
Number of Elements 1
Number of Terminals 4
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 415 W
Power Dissipation-Max (Abs) 415 W
Qualification Status Not Qualified
Rise Time-Max (tr) 100 ns
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Transistor Element Material SILICON
Turn-off Time-Max (toff) 140 ns
Turn-off Time-Nom (toff) 90 ns
Turn-on Time-Max (ton) 80 ns
Turn-on Time-Nom (ton) 40 ns
VCEsat-Max 4 V

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