Datasheets
APT8030LVFR by:

Power Field-Effect Transistor, 27A I(D), 800V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN

Part Details for APT8030LVFR by Advanced Power Technology

Overview of APT8030LVFR by Advanced Power Technology

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Part Details for APT8030LVFR

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APT8030LVFR Part Data Attributes

APT8030LVFR Advanced Power Technology
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APT8030LVFR Advanced Power Technology Power Field-Effect Transistor, 27A I(D), 800V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN
Rohs Code No
Part Life Cycle Code Transferred
Ihs Manufacturer ADVANCED POWER TECHNOLOGY INC
Package Description FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code unknown
ECCN Code EAR99
Additional Feature FRED FET
Avalanche Energy Rating (Eas) 2500 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 800 V
Drain Current-Max (ID) 27 A
Drain-source On Resistance-Max 0.3 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-264AA
JESD-30 Code R-PSFM-T3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 520 W
Pulsed Drain Current-Max (IDM) 108 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

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