Datasheets
APT75GT120JRDQ3 by:

Insulated Gate Bipolar Transistor, 97A I(C), 1200V V(BR)CES, N-Channel, ISOTOP-4

Part Details for APT75GT120JRDQ3 by Advanced Power Technology

Overview of APT75GT120JRDQ3 by Advanced Power Technology

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Applications Industrial Automation Electronic Manufacturing

Part Details for APT75GT120JRDQ3

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APT75GT120JRDQ3 Part Data Attributes

APT75GT120JRDQ3 Advanced Power Technology
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APT75GT120JRDQ3 Advanced Power Technology Insulated Gate Bipolar Transistor, 97A I(C), 1200V V(BR)CES, N-Channel, ISOTOP-4
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer ADVANCED POWER TECHNOLOGY INC
Package Description ISOTOP-4
Reach Compliance Code unknown
ECCN Code EAR99
Case Connection ISOLATED
Collector Current-Max (IC) 97 A
Collector-Emitter Voltage-Max 1200 V
Configuration SINGLE WITH BUILT-IN DIODE
JESD-30 Code R-PUFM-X4
Number of Elements 1
Number of Terminals 4
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application GENERAL PURPOSE SWITCHING
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 444 ns
Turn-on Time-Nom (ton) 115 ns

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