Part Details for APT60GT60BR by Advanced Power Technology
Results Overview of APT60GT60BR by Advanced Power Technology
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- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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APT60GT60BR Information
APT60GT60BR by Advanced Power Technology is an IGBT.
IGBTs are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for APT60GT60BR
APT60GT60BR CAD Models
APT60GT60BR Part Data Attributes
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APT60GT60BR
Advanced Power Technology
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Datasheet
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APT60GT60BR
Advanced Power Technology
Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247, 3 PIN
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| Rohs Code | No | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | ADVANCED POWER TECHNOLOGY INC | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 100 A | |
| Collector-Emitter Voltage-Max | 600 V | |
| Configuration | SINGLE | |
| Fall Time-Max (tf) | 490 ns | |
| Gate-Emitter Thr Voltage-Max | 5 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JEDEC-95 Code | TO-247AD | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 500 W | |
| Qualification Status | Not Qualified | |
| Rise Time-Max (tr) | 190 ns | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | GENERAL PURPOSE SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 495 ns | |
| Turn-on Time-Nom (ton) | 84 ns |