Part Details for APT60GF120JRD by Advanced Power Technology
Overview of APT60GF120JRD by Advanced Power Technology
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Applications
Industrial Automation
Electronic Manufacturing
Part Details for APT60GF120JRD
APT60GF120JRD CAD Models
APT60GF120JRD Part Data Attributes:
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APT60GF120JRD
Advanced Power Technology
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Datasheet
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APT60GF120JRD
Advanced Power Technology
Insulated Gate Bipolar Transistor, 115A I(C), 1200V V(BR)CES, N-Channel, ISOTOP-4
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| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | ADVANCED POWER TECHNOLOGY INC | |
| Package Description | ISOTOP-4 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Additional Feature | FAST SWITCHING | |
| Case Connection | ISOLATED | |
| Collector Current-Max (IC) | 115 A | |
| Collector-Emitter Voltage-Max | 1200 V | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Gate-Emitter Voltage-Max | 20 V | |
| JESD-30 Code | R-PUFM-X4 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 521 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 890 ns | |
| Turn-on Time-Nom (ton) | 117 ns |