Part Details for APT6011B2VRG by Microchip Technology Inc
Results Overview of APT6011B2VRG by Microchip Technology Inc
- Distributor Offerings: (12 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
APT6011B2VRG Information
APT6011B2VRG by Microchip Technology Inc is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for APT6011B2VRG
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
78AH6147
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Newark | Mosfet Mos5 600 V 11 Ohm To-247 Max 3 T-Max Tube Rohs Compliant: Yes |Microchip APT6011B2VRG RoHS: Compliant Min Qty: 30 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$20.8700 / $25.7300 | Buy Now |
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DISTI #
APT6011B2VRG-ND
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DigiKey | MOSFET N-CH 600V 49A T-MAX Min Qty: 30 Lead time: 20 Weeks Container: Tube | Temporarily Out of Stock |
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$25.7300 | Buy Now |
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DISTI #
APT6011B2VRG
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Avnet Americas | Trans MOSFET N-CH 600V 49A 3-Pin(3+Tab) T-MAX - Rail/Tube (Alt: APT6011B2VRG) RoHS: Compliant Min Qty: 30 Package Multiple: 1 Lead time: 20 Weeks, 0 Days Container: Tube | 0 |
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$19.6893 / $21.0253 | Buy Now |
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DISTI #
494-APT6011B2VRG
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Mouser Electronics | MOSFETs MOSFET MOS5 600 V 11 Ohm TO-247 MAX RoHS: Compliant | 0 |
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$22.2200 / $25.7300 | Order Now |
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DISTI #
APT6011B2VRG
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Microchip Technology Inc | MOSFET MOS 5 600 V 110 mOhm TO-247 MAX, T-MAX, Projected EOL: 2044-04-30 ECCN: EAR99 RoHS: Compliant Lead time: 20 Weeks, 0 Days Container: Tube |
0 Alternates Available |
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$19.7200 / $25.7300 | Buy Now |
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Onlinecomponents.com | MOSFET (Metal Oxide) Transistor - N-Channel - 600 V - 49A Continuous Drain (Id)@25°C - 110mOhm @ 24.... more RoHS: Compliant | 0 |
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$22.4100 / $31.3100 | Buy Now |
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DISTI #
APT6011B2VRG
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TME | Transistor: N-MOSFET, POWER MOS 5®, unipolar, 600V, 49A, Idm: 196A Min Qty: 1 | 0 |
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$29.5800 / $37.2000 | RFQ |
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NAC | FG, MOSFET, 600V, 0.11_OHM, TO-247 T-MAX, RoHS RoHS: Compliant Min Qty: 14 Package Multiple: 1 Container: Tube | 0 |
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$20.3700 / $23.8600 | Buy Now |
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DISTI #
APT6011B2VRG
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Richardson RFPD | POWER MOSFET TRANSISTOR RoHS: Compliant Min Qty: 30 | 0 |
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$22.0500 / $22.9400 | Buy Now |
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DISTI #
APT6011B2VRG
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Avnet Silica | Trans MOSFET NCH 600V 49A 3Pin3Tab TMAX (Alt: APT6011B2VRG) RoHS: Compliant Min Qty: 30 Package Multiple: 1 Lead time: 22 Weeks, 0 Days | Silica - 0 |
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Buy Now |
Part Details for APT6011B2VRG
APT6011B2VRG CAD Models
APT6011B2VRG Part Data Attributes
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APT6011B2VRG
Microchip Technology Inc
Buy Now
Datasheet
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Compare Parts:
APT6011B2VRG
Microchip Technology Inc
Power Field-Effect Transistor, 49A I(D), 600V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Select a part to compare: |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | MICROCHIP TECHNOLOGY INC | |
| Package Description | TMAX-3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 20 Weeks | |
| Additional Feature | FAST SWITCHING | |
| Avalanche Energy Rating (Eas) | 3000 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 49 A | |
| Drain-source On Resistance-Max | 0.11 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSIP-T3 | |
| JESD-609 Code | e1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 196 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for APT6011B2VRG
This table gives cross-reference parts and alternative options found for APT6011B2VRG. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of APT6011B2VRG, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| APT6011B2VRG | Microsemi Corporation | Check for Price | Power Field-Effect Transistor, 49A I(D), 600V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TMAX-3 | APT6011B2VRG vs APT6011B2VRG |
| APT6011B2VR | Microsemi Corporation | Check for Price | Power Field-Effect Transistor, 49A I(D), 600V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TMAX-3 | APT6011B2VRG vs APT6011B2VR |
| APT56M50B2 | Microchip Technology Inc | $10.4943 | Power Field-Effect Transistor, 56A I(D), 500V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | APT6011B2VRG vs APT56M50B2 |
| APT8024B2VFR | Microsemi Corporation | Check for Price | Power Field-Effect Transistor, 33A I(D), 800V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TMAX-3 | APT6011B2VRG vs APT8024B2VFR |
| IXFK44N50S | IXYS Corporation | Check for Price | Power Field-Effect Transistor, 44A I(D), 500V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA | APT6011B2VRG vs IXFK44N50S |
| IXFX34N80 | IXYS Corporation | $13.0993 | Power Field-Effect Transistor, 34A I(D), 800V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLUS247, 3 PIN | APT6011B2VRG vs IXFX34N80 |
| IXFX48N55 | Littelfuse Inc | Check for Price | Power Field-Effect Transistor, 48A I(D), 550V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLUS247, 3 PIN | APT6011B2VRG vs IXFX48N55 |
| APT6013B2LLG | Microsemi Corporation | Check for Price | Power Field-Effect Transistor, 43A I(D), 600V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TMAX-3 | APT6011B2VRG vs APT6013B2LLG |
| APT6017B2LLG | Microsemi Corporation | Check for Price | Power Field-Effect Transistor, 35A I(D), 600V, 0.17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TMAX-3 | APT6011B2VRG vs APT6017B2LLG |
| APT8024B2VR | Microsemi Corporation | Check for Price | Power Field-Effect Transistor, 33A I(D), 800V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TMAX-3 | APT6011B2VRG vs APT8024B2VR |
APT6011B2VRG Frequently Asked Questions (FAQ)
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A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. Ensure a minimum of 1 oz copper thickness and a thermal relief pattern under the device.
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Implement a heat sink or thermal interface material, ensure good airflow, and consider derating the device's power dissipation according to the datasheet's thermal derating curve.
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Exceeding Tj can lead to reduced lifespan, increased thermal resistance, and potential device failure. Ensure the device operates within the recommended temperature range to maintain reliability.
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Verify the OCP threshold is set correctly, check for excessive current draw, and ensure the device is properly cooled. Consult the datasheet for OCP timing and threshold details.
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Using non-recommended input capacitor values may lead to instability, oscillations, or reduced performance. Always follow the datasheet's recommended input capacitor values for optimal operation.